Properties of pulse plated ZnS films

Murali, K. R.; Vasantha, S.; Rajamma, K.

doi:10.1016/j.matlet.2007.10.012

Cited by 18 publications

(7 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…ZnS is a direct band gap semiconductor, with a bandgap for films and nanoparticles reported in the literature of 3.5-4.1 eV. 16,17,[27][28][29][30][31][32][33] Cu 2 S has an indirect band gap of 1.2 eV, and a direct band gap of 2.4 eV. 34,35 UV-Vis was performed on films from all stack configurations, and results of configurations 2 and 3 are shown in Figs.…”

Section: Resultsmentioning

confidence: 99%

Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

Short

Jewell

Bielecki

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Multilayer film stacks of ZnS and Cu x S (x $ 2) were made via atomic layer deposition. The precursors were bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc, bis(2,2,6,6-tetramethyl-3,5heptanedionato)copper, and H 2 S generated in situ for sulfur. Samples were deposited at 200 C, in layers ranging from approximately 2 to 20 nm thick, based on binary growth rates. The properties of the film stacks were studied with atomic force microscopy, ultraviolet-visible spectroscopy, and extended x-ray absorption fine structure. The results demonstrate that the structure of films with the thinnest layers is dominated by Cu x S, whereas in the thicker films, the structure is determined by whichever material is first deposited. This can be attributed to the crystal structure mismatch of ZnS and Cu x S. V

show abstract

Section: Resultsmentioning

confidence: 99%

Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

Short

Jewell

Bielecki

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

show abstract

“…ZnS thin films have been fabricated by several techniques, such as vacuum deposition [283], successive ionic layer adsorption and reaction process (SILAR) [284][285][286], metal-organic chemical vapor deposition (MOCVD) [287,288], molecular beam epitaxy (MBE) [289,290], spray pyrolysis [291,292], chemical bath deposition (CBD) [293,294], pulse-laser deposition [295,296], atomic layer epitaxy (ALE) [297,298], sputtering [299], sol-gel [300,301], and chemical vapor deposition [302,303]. For example, Herrero and co-workers synthesized ZnS films by CBD with a decent growth rate using NH 2 -NH 2 as a complementary complexing agent for the classically used NH 3 reaction baths.…”

Section: D Nanostructuresmentioning

confidence: 99%

ZnS nanostructures: From synthesis to applications

Fang

Zhai

Gautam

et al. 2011

Progress in Materials Science

1,181

569

View full text Add to dashboard Cite

“…ZnS is a direct band gap semiconductor, with a band gap for films and nanoparticles reported in the literature of 3.5-4.1 eV. [12][13][14][15][16][17][18][19] FIG. 1.…”

Section: B Photospectroscopymentioning

confidence: 99%

Atomic layer deposition of zinc sulfide with Zn(TMHD)2

Short¹,

Jewell²,

Doshay³

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

The atomic layer deposition (ALD) of ZnS films with Zn(TMHD)2 and in situ generated H2S as precursors was investigated, over a temperature range of 150–375 °C. ALD behavior was confirmed by investigation of growth behavior and saturation curves. The properties of the films were studied with atomic force microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, ultraviolet–visible–infrared spectroscopy, and extended x-ray absorption fine structure. The results demonstrate a film that can penetrate a porous matrix, with a local Zn structure of bulk ZnS, and a band gap between 3.5 and 3.6 eV. The ZnS film was used as a buffer layer in nanostructured PbS quantum dot solar cell devices.

show abstract

Properties of pulse plated ZnS films

Cited by 18 publications

References 14 publications

Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

ZnS nanostructures: From synthesis to applications

Atomic layer deposition of zinc sulfide with Zn(TMHD)2

Contact Info

Product

Resources

About