Atomic layer deposition of zinc sulfide with Zn(TMHD)2

Abstract

The atomic layer deposition (ALD) of ZnS films with Zn(TMHD)2 and in situ generated H2S as precursors was investigated, over a temperature range of 150–375 °C. ALD behavior was confirmed by investigation of growth behavior and saturation curves. The properties of the films were studied with atomic force microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, ultraviolet–visible–infrared spectroscopy, and extended x-ray absorption fine structure. The results demonstrate a film that can penetrate a porous matrix, with a local Zn structure of bulk ZnS, and a band gap between 3.5 and 3.6 eV. The ZnS film was used as a buffer layer in nanostructured PbS quantum dot solar cell devices.

Temperature effect on zinc oxysulfide-Zn(O,S) films synthesized by atomic layer deposition for Cu(In,Ga)Se2 solar cells

“…However, at T dep ¼ 120 C, the corresponding growth rate (1.6 Å /cycle) remains similar to the reported values [1.37 Å /cycle (Ref. 26) and 1.7 Å /cycle (Ref. 27)].…”

“…15,23,26,36 Consequently, considering the growth of a material A x ðB y ; C z Þ via exchange mechanisms, the growth rate should decrease as the C content of the films increases since the reaction chemistry of the binary film AB can significantly vary on the surface of the AC film. Thus, from 180 C, the significant decrease of the growth rate is most probably due to the high sulfur content of the films.…”

Optimising conditions for the growth of nanocrystalline ZnS thin films from acidic chemical baths

“…It has applications in photonic crystal sensors [1], heterojunction diodes [2], thin film photovoltaic cells [3][4][5][6][7], optical filters [8], light emitting diodes [9] and anti-reflection coatings [10]. Several methods have been employed to synthesize thin films including spray pyrolysis [11,12], solvothermal synthesis [13,14], sol-gel [2], successive ionic layer adsorption and reaction (SILAR) [15], pulsed laser deposition [16], close-space sublimation [17], metal-organic chemical vapor deposition (MOCVD), photo-assisted MOCVD [18], RF-mganetron sputtering [19,20], electrodeposition [21,22], thermal evaporation [23], aerosol assisted chemical vapor deposition (AACVD) [24,25], chemical bath deposition (CBD) [26][27][28][29][30][31][32][33][34] and film casting method [35,36].…”

Novel silicon phases and nanostructures for solar energy conversion

“…51 The matrix can be created, e.g., by infilling the gaps between NPs in colloidal quantum dot films using atomic layer deposition (ALD). [105][106][107] Another approach achieves embedding by solution processing. After NP synthesis, the ligands on the NPs are exchanged with transition metal chalcogenide complexes (TMCs).…”