Properties of phosphorus-doped (Zn,Mg)O thin films and device structures

Abstract

The properties of phosphorus-doped (Zn,Mg)O polycrystalline and epitaxial thin films are described. The as-deposited (Zn,Mg)O:P films are n type with high electron carrier density. High resistivity is induced in the films with moderate temperature annealing, which is consistent with suppression of the donor state and activation of the deep acceptor. The resistivity of the asdeposited and annealed film is an order of magnitude higher than similar samples with no Mg, consistent with a shift in the conduction band edge relative to the defect-related donor state. The capacitance-voltage characteristics of annealed metal/insulator/P-doped (Zn,Mg)O structures in which the (Zn,Mg)O is polycrystalline exhibit p-type polarity. In addition, multiple polycrystalline devices comprising n-type ZnO/P-doped (Zn,Mg)O thin-film junctions display asymmetric I-V characteristics that are consistent with the formation of a p-n junction at the interface, although the ideality factor is anomalously high.

N Doping and Al-N Co-doping in Sol–Gel ZnO Films: Studies of Their Structural, Electrical, Optical, and Photoconductive Properties

“…[3][4][5] Group V elements have been shown to be the most promising dopants for producing p-type ZnO. [6][7][8] According to earlier theoretical calculations of the electronic band structure, N is predicted to be the best candidate for producing a shallow acceptor level in ZnO. 9 N doping in particular has been attempted by several groups to reach this goal.…”

INFLUENCE OF OXIGEN CONTENT IN WORKING GAS ON THE ELECTRICAL PROPERTIES OF THIN FILMS Zn1-x Mnx O, OBTAINED BY REACTIVE MAGNETRON SPUTTERING

“…Íàïðèêëàä, äëÿ âèï-ðÿìëÿþ÷èõ êîíòàêò³â ìåòàë-íàï³âïðîâ³äíèê áàaeàíî âèêîðèñòîâóâàòè íèçüêîîìí³ íàï³â-ïðîâ³äíèêîâ³ øàðè. Ïèòîìèé îï³ð ïë³âîê ZnO, ÿê³ âèêîðèñòîâóþòüñÿ ÿê áàçîâèé ìàòåð³àë äëÿ îäåðaeàííÿ íàï³âìàãí³òíèõ íàï³âïðîâ³äíèê³â, õàðàêòåðèçóºòüñÿ øèðîêèì ðîçêèäîì çíà÷åíü â³ä ~ 10 -2 äî 10 9 Îì•ñì, ùî çâ'ÿçàíî ç ð³çíèìè ìåòîäàìè ¿õ âèðîùóâàííÿ [1,2].…”