Doping of ZnO

doi:10.1002/9783527623945.ch4

Zinc Oxide 2009

DOI: 10.1002/9783527623945.ch4

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Doping of ZnO

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Cited by 4 publications

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Low Temperature Aqueous Solution Route to Reliable p-Type Doping in ZnO with K: Growth Chemistry, Doping Mechanism, and Thermal Stability

et al. 2012

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In this paper, we identified how the growth environment chemistry can critically influence the type and nature of the incorporated K defect in ZnO films grown using the aqueous solution route, which explains the switching between p-and ntype conductivities under different doping or thermal annealing conditions. This was achieved by relating the growth environment to the structural, optical, and electrical characteristics of the films. The thermal behavior of these defects up to 700 °C confirms the proposed doping mechanism. It is found that the best route to realizing p-type conductivity is through minimizing the amount of K i and K Zn −K i complexes because films with high concentrations of K i have a slow p-type recovery caused by the slow out-diffusion of K i . The highest hole concentrations for as-grown films and those that were annealed at 700 °C for 30 min were 2.6 × 10 16 and 3.2 × 10 17 cm −3 , respectively. The upper limit for p-type doping using this route appears to be about mid-10 17 cm −3 . Our results show that the low temperature aqueous solution synthesis route of ZnO:K is a promising solution toward reliable p-type conductivity for future device applications.

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Low Temperature Aqueous Solution Route to Reliable p-Type Doping in ZnO with K: Growth Chemistry, Doping Mechanism, and Thermal Stability

et al. 2012

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Band gap and electronic properties of wurtzite-structure ZnO co-doped with IIA and IIIA

Han

Meng

Zhang

et al. 2011

Journal of Applied Physics

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We report the bandgap and electronic properties of wurtzite ZnO doped with elements IIA or/and IIIA, investigated using both theoretical and experimental methods. With wurtzite ZnO co-doped with B and Mg (denoted as ZnO:[B,Mg]) grown via metalorganic chemical vapor deposition, we have observed that both the bandgap and the conductivity can be widely tunable with the doping levels. From first-principles calculations of wurtzite ZnO:Mg, we show that IIA doping elements have a great impact on the widening of the bandgap. Also, from a newly developed calculation method for investigating the electronic properties of wurtzite ZnO:Al, we have found that IIIA doping elements play an important role in tailoring the conductivity.

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Structural, electronic and optical properties of Cu-doped ZnO: experimental and theoretical investigation

Horzum

Torun

Seri̇n

et al. 2016

Philosophical Magazine

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Doping of ZnO

Cited by 4 publications

References 161 publications

Low Temperature Aqueous Solution Route to Reliable p-Type Doping in ZnO with K: Growth Chemistry, Doping Mechanism, and Thermal Stability

Low Temperature Aqueous Solution Route to Reliable p-Type Doping in ZnO with K: Growth Chemistry, Doping Mechanism, and Thermal Stability

Band gap and electronic properties of wurtzite-structure ZnO co-doped with IIA and IIIA

Structural, electronic and optical properties of Cu-doped ZnO: experimental and theoretical investigation

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