Properties of Phosphorus‐Doped Silicon‐Rich Amorphous Silicon Carbide Film Prepared by a Solution Process

Abstract

Using a polymeric precursor synthesized from a mixture of cyclopentasilane, white phosphorus, and 1‐hexyne, we deposited phosphorus‐doped silicon‐rich amorphous silicon carbide (a‐SiC) films via a solution‐based process. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross‐linkage. Therefore, the polymeric precursor is sufficiently pure for effective doping and fabricating semiconducting a‐SiC. This study presents the results of a detailed study of the effect of carbon and phosphorus concentrations on the structural, optical, and electrical properties of a‐SiC films. The lowest activation energy for these films is 0.39 eV, which leads to an optical gap and a dark conductivity of 2.1 eV and 109 Ω cm, respectively. Moreover, these films satisfy the Meyer–Neldel rule for thermally activated conductivity, which indicates that white‐phosphorus doping of solution‐processed a‐SiC produces films with the same characteristics as phosphine‐doped vacuum‐processed a‐SiC.

Grafting of Ring-Opened Cyclopropylamine Thin Films on Silicon (100) Hydride via UV Photoionization

“…In view of this trend, a closer examination of the Si 2p spectrum for the UV-photoionized surface uncovered some peculiarities at the region from 100 to 102 eV. A Gaussian–Lorentzian curve fit at 100.4 eV was attempted for the Si–C linkage, − and much to our surprise, it was actually possible to accommodate this peak without compromising the overall fit. However, considering the difficulties of assigning Si–C at that position due to the coexistence of the large resident Si 2p 1/2 peak, especially for thin films, , it was thought to be prudent not to forcefully argue that the Si–C linkage on the surface was the only outcome of the reaction process.…”

Photoelectron yield spectroscopy and inverse photoemission spectroscopy evaluations of p-type amorphous silicon carbide films prepared using liquid materials

“…Moreover, the polymer can be doped to form p-or n-type SiC through the dissolution of appropriate compounds. 8 These unusual features satisfy the requirement as a solution-based semiconducting material.…”

“…A picture of the a-SiC structure can be described on the basis of FTIR measurements as a disordered a-Si network in which many hydrogen atoms are incorporated in the form of CH n moieties. 7,8,13 Therefore, most of the topological/compositional disorder might stem from the variety of hydrogen configurations around C atoms (CH, CH 2 , and CH 3 ). The influence of hydrogen on the electronic structure in conventional a-SiC films is well revealed through XPS and Auger measurements.…”

Controlling Directional Liquid Motion on Micro- and Nanocrystalline Diamond/β-SiC Composite Gradient Films

“…Diamond, a famous gemstone, offers a number of remarkable properties, such as high hardness, high thermal conductivity, semiconductivity, chemical inertness, and biocompatibility. − Although diamond is considered chemically inert, the surface chemistry of diamond is rich and flexible and offers a variety of surface functionalization. , All these properties recommend diamond for applications in the field of implants, chemical and biological sensors, and DNA and protein chips. − Similarly, nanocrystalline silicon carbide (SiC) is an attractive substrate for copious applications, including biosensing, power devices and single photon sources, , because SiC possesses unique electronic properties, mechanical robustness, chemical inertness, thermal stability, nontoxicity, and biocompatibility. − Furthermore, diamond and SiC exhibit a different surface termination, which implies the possibility of combining different surface energies. As the composition of diamond and SiC gradually changes, the surface free energy changes accordingly, which has grave impact on and may drive protein adsorption. , Most gradient surfaces published are microgradient surfaces, rendering an application in water transport challenging due to contact line pinning. , Therefore, a lot of studies are devoted to the synthesis of diamond films with nanosized crystals due to their low surface roughness and high wear resistance.…”