Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

Abstract

Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition

N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition

“…But N-face III-nitride structure has a great potential in various applications which are normally not accessible to Ga-face structure alone. The flipped internal electrical field in N-face GaN/AlGaN/GaN heterostructure changes the position of twodimensional (2D) electron gas [1][2][3]. Compared to Ga-face InGaN multiple quantum wells, enhanced indium incorporation into N-face structure has been observed [4].…”

Growth and characterization of N‐polar GaN and AlGaN/GaN HEMTs on (111) silicon

“…Consequently also the first devices, transistors, were demonstrated by MBE [7]. More recently hexagonfree films and transistors were also fabricated by metalorganic chemical vapour deposition (MOCVD), in particular on misoriented sapphire and C-polar SiC substrates [8][9][10].…”

“…Selected samples with AlGaN/GaN cap layers and semi-insulating GaN base layers were processed into HEMTs for device testing, following the same general growth and fabrication procedures as previously reported for samples on sapphire [9]. Van der Pauw Hall measurements performed on the samples resulted in a sheet electron density of 9 x 10 12 cm -2 and an electron mobility of 1135 cm 2 /Vs.…”

RF and DC characterization of state‐of‐the‐art GaN HEMT devices through cellular Monte Carlo simulations

“…So far, Ga-face devices have largely been investigated, mainly because of the more challenging growth of high quality N -face films. However, new N -face nitride processes were recently reported [3,4], making the exploitation of the N -face reverse polarization appealing for future device engineering.…”