RF and DC characterization of state‐of‐the‐art GaN HEMT devices through cellular Monte Carlo simulations

Abstract

Here we report simulation results for high‐frequency, high‐power state‐of‐the‐art GaN High Electron Mobility Transistors (HEMTs), using a full band Cellular Monte Carlo simulator, which includes the full details of the band structure and the phonon spectra, in order to study the RF performance of the new promising technology available nowadays.A complete characterization of an InGaN back – barrier device has been performed using experimental data to calibrate the few adjustable parameters of the simulator. Furthermore, a study on a device structure based on the N‐face configuration was performed. Finally, threading dislocation effects on HEMT device transport properties were investigated (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)