Properties of MBE grown InSb and InSb1−<i>x</i>Bi<i>x</i>

Noreika, A. J.; Greggi, J.; Takei, W. J.; Francombe, M. H.

doi:10.1116/1.571954

Cited by 79 publications

(12 citation statements)

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“…We found reports of the growth of only one bismuth-bearing zincblende alloy in the literature (Jean-Louis and Hamon, 1969a,b;Joukoff and Jean-Louis, 1972; Oe et al, 1981;Noreika et al, 1982Noreika et al, , 1983. Using equilibrium growth methods, InSbl,Bi, alloys were grown with up to -2.6 mole percent bismuth, the solid-solubility limit of InBi in InSb.…”

Section: Task 1 4 I T E R a T U R E Searchmentioning

confidence: 98%

Structural properties of bismuth-bearing semiconductor alloys

Berding

Sher

Chen

et al. 1988

Journal of Applied Physics

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Materials currently used for detection in the infrared spectral region have notoriously poor structural properties. In search of a better narrow-gap material, we have addressed the structural properties of bismuth-bearing III-V semiconductor alloys theoretically. Because the Bi compounds are not known to form zinc-blende structures, only the anion-substituted alloys InPBi, InAsBi, and InSbBi are considered candidates as narrow-gap semiconductors. We calculate the bond energies and lengths for the zinc-blende Bi compounds and their diluted and concentrated alloys. Strain coefficients for the compounds are calculated, and predictions for the mixing enthalpies, miscibility gaps, and critical temperatures are made. Miscibility calculations indicate that InSbBi will be the most miscible, and because of the large lattice mismatch of the constituents, InPBi will be the most difficult to mix. Tendencies toward cluster formation and deviations from randomness in the alloys are considered. Calculations of the hardness of the Bi compounds indicate that, once formed, the InPBi alloy will be harder than the other Bi alloys and substantially harder than the currently favored narrow-gap semiconductor HgCdTe. Thus, although InSbBi may be an easier material to prepare, InPBi promises to be a harder material. Vacancy formation energies are calculated and compared with those of the constituent compounds of narrow-gap II-VI alloys.

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Section: Task 1 4 I T E R a T U R E Searchmentioning

confidence: 98%

Structural properties of bismuth-bearing semiconductor alloys

Berding

Sher

Chen

et al. 1988

Journal of Applied Physics

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“…As an ohmic contact, indium metals were soldered onto the as-grown InSb surfaces in the ambient air. 17 The RHEED patterns obtained from growing InSb on ͑111͒A substrates were always streaky, and the images obtained by Nomarski optical microscopy were featureless. The AFM images of 30-nm-grown InSb surfaces are shown in Fig.…”

Section: ͓S0003-6951͑00͒03505-1͔mentioning

confidence: 99%

Two-dimensional growth of InSb thin films on GaAs(111)A substrates

Kanisawa

Yamaguchi

Hirayama

2000

Applied Physics Letters

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Heteroepitaxy of high-quality InSb films was performed directly on GaAs surfaces by using molecular beam epitaxy. Despite the 14.6% lattice mismatch, two-dimensionally grown InSb on GaAs(111)A substrates were obtained from the initial stage, but not on (001) substrates. A conductive layer was formed from the early stage of the growth on the (111)A surface, and the mobilities and carrier concentrations of InSb on (111)A substrates suggested a low defect density due to confinement of the dislocations to the interface.

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“…Wide variety of preparation methods such as molecular beam epitaxy (MBE) [1,2,[6][7][8], metalorganic chemical vapor deposition (MOCVD) [9][10][11][12], and metalorganic magnetron sputtering (MOMS) [13][14][15][16] also have been used for the heteroepitaxial growth of InSb films on GaAs and Si substrates.…”

Section: Introductionmentioning

confidence: 99%