Two-dimensional growth of InSb thin films on GaAs(111)A substrates

Kanisawa, Kiyoshi; Yamaguchi, Hiroshi; Hirayama, Y.

doi:10.1063/1.125826

Cited by 64 publications

(51 citation statements)

References 17 publications

(5 reference statements)

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“…The ͑111͒A growth suppresses edge dislocations which are thought to be responsible for the increase of n at the interface. 12 The lower apparent, i.e., experimentally measured, n from the Imperial ͑100͒ growth suggests a lower density of such dislocations, which is consistent with the improved mobility. Note that there is surface depletion because the Fermi level is known to be pinned close to the valence band edge at the surface of the material.…”

supporting

confidence: 66%

“…This is consistent with the statement that donors arise from dislocation-related states. 12 There is no corresponding abrupt change in mobility at this thickness, which gradually decreases with decreasing thickness with values 40% greater than those obtained from single carrier model.…”

mentioning

confidence: 78%

“…4 -11 The main obstacle to acquiring high mobility of the hybrid system comes from the strain at the InSb/GaAs interface due to the large lattice mismatch of 14.6%, which is particularly detrimental to thin films. Kanisawa et al 12 obtained high mobility thin InSb layers on GaAs͑111͒A substrates by a two-step growth process ͑referred to as the ''NTT recipe''͒. Nevertheless, this technique failed to improve InSb films grown on GaAs͑100͒.…”

mentioning

confidence: 99%

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High-mobility thin InSb films grown by molecular beam epitaxy

Zhang

Clowes

Debnath

et al. 2004

Applied Physics Letters

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The problem of preparing high-mobility thin InSb films is revisited for magnetoresistive and spintronic sensor applications. We introduce a growth process that significantly improves the electrical properties of thin unintentionally doped InSb layers ͑60-300 nm͒ epitaxially grown on GaAs͑100͒ substrates by reducing the density of dislocations within the interfacial layer. The epilayer properties are well described by a differential two-layer model. This model confirms that the contribution of the interface can only be donor-like. Moreover, the electrical properties of the InSb layers change continuously away from the interface up to sample thickness of the order of 1 m.

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supporting

confidence: 66%

mentioning

confidence: 78%

mentioning

confidence: 99%

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High-mobility thin InSb films grown by molecular beam epitaxy

Zhang

Clowes

Debnath

et al. 2004

Applied Physics Letters

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“…Such a large misfit in lattice parameters leads usually to a Stransky-Krastanov mode of growth, and thus the growth of smooth and structurally perfect films cannot be a simple matter. This is confirmed by the considerable number of papers devoted to the epitaxial growth of InSb on GaAs, where it has been found that there is no single model of the growth, and that the growth mechanism is complicated [1,2,3]. It depends on several technological parameters of the growth.…”

Section: Introductionsupporting

confidence: 56%

“…Kanisawa et al [3] recently proposed a two-stage growth, which seems to eliminate the apparent initial Stransky-Krastanov mode of growth for the case the GaAs oriented in the (111)A plane. They deposited a first 3 nm InSb layer at 310-325˚C and then, in the second stage, the rest of the film was deposited at 380-395˚C.…”

Section: Introductionmentioning

confidence: 97%

Early stages of low temperature epitaxial growth of InSb on GaAs

Borowska

Gutek

Czajka

et al. 2005

Cryst. Res. Technol.

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Early stages of the growth of the low-temperature InSb under-layer in the two-stage method of the heteroepitaxial growth of InSb layers on GaAs substrates are studied. The investigated orientations are: (100), (111)A, (111)B, (110) planes and (110) plane misoriented by 3° towards the <100> direction. The investigated deposits are prepared by the flash evaporation method. InSb deposits having an average layer thickness between 2 nm and 10 nm consist of separate grains with a grain diameter of around 30 nm. Independent of the substrate orientation, they are oriented in conformity with the substrate, confirming that the initial mode of the growth is that of Stransky-Krastanov. Annealing of the layers at 470°C improves the crystallinity of the grains. The same annealing of 30 nm thick layers results in a decrease in their resistance and the surface roughness. The greatest changes are observed in the (100) oriented layers, and the smallest changes are observed in the (110) oriented layers.

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Lattice‐Mismatched Epitaxy of InAs on (111)A‐Oriented Substrate: Metamorphic Layer Growth and Self‐Assembly of Quantum Dots

Mano,

Ohtake,

Kuroda

2024

Physica Status Solidi (a)

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This paper reviews recent developments in the lattice‐mismatched epitaxy of InAs on (111)A‐oriented substrates and related research topics, in which the presence or absence of the misfit dislocations is controlled via prescribed growth sequences. When InAs is grown on GaAs (111)A substrates under standard growth conditions, a unique lattice‐relaxation mechanism occurs. A misfit dislocation network is formed at the initial stage of InAs growth, that is followed by the layer‐by‐layer growth of relaxed InAs films. The InAs/GaAs (111)A heterostructure is being applied in infrared photodetectors which have a new operating principle that employs the high density dislocations at the interface. The InAs/GaAs (111)A heterostructure is also useful for the growth of InGaAs layers: a nearly lattice‐relaxed InGaAs containing different concentrations of indium can be formed by inserting a thin‐InAs layer between the InGaAs and GaAs. These InGaAs layers can be used as virtual substrates with a desired lattice constant for a range of devices. In addition to the formation of lattice‐relaxed structures, dislocation‐free InAs QDs can be formed on InP (111)A substrates by applying droplet epitaxy. The C 3v symmetry of the (111)A surface makes it possible to form symmetric InAs quantum dots that emit entangled photon pairs at telecommunication wavelengths.This article is protected by copyright. All rights reserved.

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Two-dimensional growth of InSb thin films on GaAs(111)A substrates

Cited by 64 publications

References 17 publications

High-mobility thin InSb films grown by molecular beam epitaxy

High-mobility thin InSb films grown by molecular beam epitaxy

Early stages of low temperature epitaxial growth of InSb on GaAs

Lattice‐Mismatched Epitaxy of InAs on (111)A‐Oriented Substrate: Metamorphic Layer Growth and Self‐Assembly of Quantum Dots

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