Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layer

Mori, M.; Fujimoto, Naoki; Akae, N.; Uotani, K.; Tambo, T.; Tatsuyama, C.

doi:10.1016/j.jcrysgro.2005.10.011

Cited by 9 publications

(5 citation statements)

References 19 publications

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“…The electron mobility and carrier concentration of the InSb film grown via 2 Â 2-In surface phase were 15,700 cm 2 /V s and 3.8 Â 10 16 cm À3 at RT, respectively. These values are better than the data we reported before [13,14]. On the other hand, those via O3 Â O3-In were 8200 cm 2 /V s and 5.1 Â 10 16 cm À3 .…”

Section: Resultscontrasting

confidence: 70%

Heteroepitaxial growth of rotated InSb films on a Si(111) substrate via 2×2-In surface reconstruction

Mori¹,

Saito²,

Yamashita³

et al. 2007

Journal of Crystal Growth

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Section: Resultscontrasting

confidence: 70%

Heteroepitaxial growth of rotated InSb films on a Si(111) substrate via 2×2-In surface reconstruction

Mori¹,

Saito²,

Yamashita³

et al. 2007

Journal of Crystal Growth

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“…The heteroepitaxial growth of Sb-based III-V semiconductors on silicon substrates affords the possibility of infrared optical devices with silicon integrated circuits [1,2]. Recently, the growths of Sb-based materials on Si (001) substrates using the AlSb buffer layers were reported by several groups [2][3][4]. In addition, its growth mechanism also has been investigated [5,6].…”

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confidence: 99%

Structural and optical characterization of GaSb layers on Si (001) substrates

Toda

Yang

Uchitomi

2006

Phys. Status Solidi (c)

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We investigated the growth of GaSb layers on Si (001) substrates by molecular beam epitaxy (MBE). Epilayers were grown as a function of Sb 4 /Ga beam equivalent pressure ratio (BEPR). They were then characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence (PL), micro Raman scattering analysis. We confirmed that the optimum condition to grow relative high quality GaSb layer in this study was Sb 4 /Ga=20.

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“…However, the heteroepitaxy of InSb on Si is very difficult to achieve because of the large lattice mismatch of about 19.3% between InSb and Si. To overcome this difficulty, various buffer layers such as GaAs, 4) AlSb, [5][6][7][8] and Ge [9][10][11][12] have been used.…”

Section: Introductionmentioning

confidence: 99%

Effects of Initial In Coverage for Preparation of InSb Bilayer on Electrical Properties of InSb Films Grown By Surface Reconstruction Controlled Epitaxy

Mori

Yasui

Nakayama

et al. 2012

Jpn. J. Appl. Phys.

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We investigated the effects of initial In coverage for the preparation of InSb bilayer on electrical properties of InSb films grown by surface reconstruction controlled epitaxy. The electron mobility of the InSb films was affected by the initial In coverage of the In-induced surface reconstruction on Si(111) surface. Electron mobility increased with the increase in the initial In coverage up to 1.5 monolayers (ML), and decreased with further increase in In coverage. The InSb film grown with an optimal initial In coverage of 1.5 ML has a high electron mobility of about 40,000 cm2/(V·s) at room temperature. This may be due to the reduction of the 2×1-Sb surface phase or In islands on the surface after the preparation of the InSb bilayer, which cause dislocations in the film. Therefore, the perfectness of the order of atomic planes in Si–Sb–In is very important for a uniform InSb/Si interface formation before the subsequent InSb molecular beam epitaxy (MBE) growth.

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Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layer

Cited by 9 publications

References 19 publications

Heteroepitaxial growth of rotated InSb films on a Si(111) substrate via 2×2-In surface reconstruction

Heteroepitaxial growth of rotated InSb films on a Si(111) substrate via 2×2-In surface reconstruction

Structural and optical characterization of GaSb layers on Si (001) substrates

Effects of Initial In Coverage for Preparation of InSb Bilayer on Electrical Properties of InSb Films Grown By Surface Reconstruction Controlled Epitaxy

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