Properties of In-, Ga-, and Al-doped ZnO films grown by aerosol-assisted MOCVD: Influence of deposition temperature, doping level and annealing

Kuprenaite, Sabina; Murauskas, Tomas; Abrutis, A.; Kubilius, V.; Šaltytė, Z.; Plaušinaitienė, Valentina

doi:10.1016/j.surfcoat.2014.12.052

Cited by 47 publications

(25 citation statements)

References 28 publications

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“…5a) similarly to reported in Ref. [16] with a subsequent change to the pyramidal shape (Fig. 5b) being typical for LPCVD growth [6], which preserves up to 51% haze with a corresponding RMS increase up to ~90 nm (see Fig.…”

Section: Resultssupporting

confidence: 85%

Interplay between Roughness and Haze of CVD Grown ZnO:B Layers for a-Si:H/μc-Si:H Solar Cells

Kozak¹,

Kurdesau²

2017

JMSE-B

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A broad use of ZnO:B TCO (transparent conductive oxide) layers as a front contact material for amorphous (a-Si:H) and tandem (a-Si:H/μc-Si:H) silicon thin film solar cells is achieved due to an excellent combination of good optical transparency, electrical conductivity and rough surface structure. The latter provides a light trapping effect within the underlying absorber, which is characterized by the optical haze value, i.e. a ratio between diffuse and total transmittances. The synthesis of such kind of surfaces requires the precise optimization of deposition processes, which in turn may significantly affect the further formation of silicon absorber layers and, as a result, influence the solar cells performance. Following the industrial fabrication, one has to consider both the physical properties of deposited TCO layers (resistivity, optical transparency and haze) and their processing parameters (a deposition rate, adjustable for the enterprise production tact time, and an optimum material consumption for the lowest synthesis and reactor's cleaning costs). In the present study, the growth of ZnO:B layers by CVD (chemical vapour deposition) is discussed. The film properties and their production process characteristics were optimized in order to keep the balance between the optimum parameters of TCO layers, the best chemical conversion efficiency and the fastest deposition rate at various gas flows, pressure and temperatures. The highest attention was paid to obtain ZnO:B films with controllable optical haze, which was varied between 2 and 50% (at 600 nm wavelength) by changing the layer thickness and CVD process regimes. It was found that the crystallinity of subsequently deposited a-Si:H/μc-Si:H structures correlates with the optical haze and surface roughness of ZnO:B substrate layers, which leads to the significant effect on the light trapping and band-gap values of silicon films.

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Section: Resultssupporting

confidence: 85%

Interplay between Roughness and Haze of CVD Grown ZnO:B Layers for a-Si:H/μc-Si:H Solar Cells

Kozak¹,

Kurdesau²

2017

JMSE-B

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“…Fig.2(a) and Fig.2(b) show the pole figures for (10-11) plane of the (000 1)-oriented AZO thin films grown at P O2 = 10 Pa and P O2 = 15 Pa, respectively. Six symmetrical poles resulted from AZO (10)(11) reflections are identified at the tilting angle (y) of about 62 °, which is in agreement with the angle between the (000 1) plane and the diffracting (10-11) plane of AZO. The equally spaced reflections separated by 60° interval show that the AZO (10-11) plane is sixfold symmetry [15] .…”

Section: Methodssupporting

confidence: 74%

“…AZO thin films have been grown by a variety of deposition techniques [8][9][10][11][12] , such as chemical vapor deposition, DC or RF magnetron sputtering, electron beam evaporation, pulsed laser deposition, metal organic chemical vapor deposition, and sol-gel. It was found that the electrical or/and optical properties of the as-grown AZO films were mostly affected by their structure (for example, microstructure, preferential orientation or surface morphology), while the structure could be modified by controlling the corresponding deposition process.…”

Section: Introductionmentioning

confidence: 99%

Effect of oxygen partial pressure on epitaxial growth and properties of laser-ablated AZO thin films

Wang

Luo

Shen

et al. 2016

J. Wuhan Univ. Technol.-Mat. Sci. Edit.

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Al-doped ZnO (AZO) thin films were grown on c-sapphire substrates by laser ablation under different oxygen partial pressures (P O2 ). The effect of P O2 on the crystal structure, preferred orientation as well as the electrical and optical properties of the films was investigated. The structure characterizations indicated that the as-grown films were single-phased with a wurtzite ZnO structure, showing a significant c-axis orientation. The films were well crystallized and exhibited better crystallinity and denser texture when deposited at higher P O2 . At the optimum oxygen partial pressures of 10 -15 Pa, the AZO thin films were epitaxially grown on c-sapphire substrates with the (0001) plane parallel to the substrate surface, i e, the epitaxial relationship was AZO (000 1) // Al 2 O 3 (000 1). With increasing P O2 , the value of Hall carrier mobility was increased remarkably while that of carrier concentration was decreased slightly, which led to an enhancement in electrical conductivity of the AZO thin films. All the films were highly transparent with an optical transmittance higher than 85 %.

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“…The doping of ZnO by different impurity atoms, either by substitution of zinc or oxygen, was described by several authors [4,7], and show an improvement of the electrical properties while maintaining its good optical properties. Among those studied experimentally, n-type doping can be achieved by the elements of group III, for example aluminum, boron, indium and gallium [7]. The results show that doping ZnO with Al, In or Ga enhances the transmittance of materials and decreases its resistivity at low dopant concentrations.…”

Section: Introductionmentioning

confidence: 99%

Comparative first principles study of ZnO doped with group III elements

Khuili¹,

Fazouan²,

Makarim

et al. 2016

Journal of Alloys and Compounds

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Properties of In-, Ga-, and Al-doped ZnO films grown by aerosol-assisted MOCVD: Influence of deposition temperature, doping level and annealing

Cited by 47 publications

References 28 publications

Interplay between Roughness and Haze of CVD Grown ZnO:B Layers for a-Si:H/μc-Si:H Solar Cells

Interplay between Roughness and Haze of CVD Grown ZnO:B Layers for a-Si:H/μc-Si:H Solar Cells

Effect of oxygen partial pressure on epitaxial growth and properties of laser-ablated AZO thin films

Comparative first principles study of ZnO doped with group III elements

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