Abstract:The term "high-entropy alloys (HEAs)" first appeared about 10 years ago defining alloys composed of n = 5-13 principal elements with concentrations of approximately 100/n at.% each. Since then many equiatomic (or near equiatomic) single-and multi-phase multicomponent alloys were developed, which are reported for a combination of tunable properties: high hardness, strength and ductility, oxidation and wear resistance, magnetism, etc. In our paper, we focus on probably single-phase HEAs (solid solutions) out of all HEAs studied so far, discuss ways of their prediction, mechanical properties. In contrast to classical multielement/multiphase alloys, only single-phase multielement alloys (solid solutions) represent the basic concept underlying HEAs as mixing-entropy stabilized homogenous materials. The literature overview is complemented by own studies demonstrating that the alloys CrFeCoNi, CrFeCoNiAl 0.3 and PdFeCoNi homogenized at 1300 and 1100°C, respectively, for 1 week are not singlephase HEAs, but a coherent mixture of two solid solutions.

A well-known fact about the electrical resistance of a perfect crystal lattice is that this resistance is zero. The paper demonstrates that a different situation does apply for magnetoresistance: only a perfectly free-electron gas provides us with an infinite relaxation time and zero-magnetoresistance effect, but the presence of the crystal lattice makes the relaxation time equal to a finite quantity. The size of the product of the relaxation time for magnetoresistance and the electron gyration frequency is found to be a constant dependent on both the structure of electron states in a perfect lattice and the band filling. This property of constancy implies that the relaxation time is a quantity which becomes inversely proportional to the strength of the magnetic field applied to a crystal sample. Explicit calculations on the product of the relaxation time and the frequency of electron gyration are performed for the bands of the tightly bound s electrons in simple-cubic, body-centered-cubic, and face-centered-cubic lattices taken as examples.

We present the nanoheteroepitaxial growth of gallium arsenide (GaAs) on nano-patterned silicon (Si) (001) substrates fabricated using a CMOS technology compatible process. The selective growth of GaAs nano-crystals (NCs) was achieved at 570 °C by MOVPE. A detailed structure and defect characterization study of the grown nano-heterostructures was performed using scanning transmission electron microscopy, x-ray diffraction, micro-Raman, and micro-photoluminescence (μ-PL) spectroscopy. The results show single-crystalline, nearly relaxed GaAs NCs on top of slightly, by the SiO-mask compressively strained Si nano-tips (NTs). Given the limited contact area, GaAs/Si nanostructures benefit from limited intermixing in contrast to planar GaAs films on Si. Even though a few growth defects (e.g. stacking faults, micro/nano-twins, etc) especially located at the GaAs/Si interface region were detected, the nanoheterostructures show intensive light emission, as investigated by μ-PL spectroscopy. Achieving well-ordered high quality GaAs NCs on Si NTs may provide opportunities for superior electronic, photonic, or photovoltaic device performances integrated on the silicon technology platform.

Nano-heteroepitaxial growth of GaAs on Si(001) by metal organic vapor phase epitaxy was investigated to study emerging materials phenomena on the nano-scale of III-V/Si interaction. Arrays of Si nano-tips (NTs) embedded in a SiO matrix were used as substrates. The NTs had top Si openings of 50-90 nm serving as seeds for the selective growth of GaAs nano-crystals (NCs). The structural and morphological properties were investigated by high resolution scanning electron microscopy, atomic force microscopy, electron backscatter diffraction, x-ray diffraction, and high resolution scanning transmission electron microscopy. The GaAs growth led to epitaxial NCs featuring a bi-modal distribution of size and morphology. NCs of small size exhibited high structural quality and well-defined {111}-{100} faceting. Larger clusters had less regular shapes and contained twins. The present work shows that the growth of high quality GaAs NCs on Si NTs is feasible and can provide an alternate way to the integration of compound semiconductors with Si micro- and opto-electronics technology.