Properties of GaN grown on sapphire substrates

Mesoporous GaN for Photonic Engineering—Highly Reflective GaN Mirrors as an Example

“…A 3D parameter plot of NP-GaN as a comparison with other photonic materials. [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39] The NP-GaN system introduces a new material tunability in photonic engineering among high quality and electrically desirable material systems as signified in the light blue cubic region. ASSOCIATED CONTENT 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 HUbp_eZukcfeYFAIiH9s74DklA&e= .…”

An Integrated On-Chip Flux Concentrator for Galvanic Current Sensing

“…Two geometries of the loop inductor are compared using magnetostatic simulations in ANSYS EM suite (Maxwell) on a GaN substrate of thickness 80µm with relative permittivity and resistivity set to 9.5 and 6 -cm respectively [21]. We find that the resistivity of the substrate does not affect the results within a range of 0.1-100 -cm.…”

Growth of GaN quasi‐substrates by hydride vapor phase epitaxy

“…It was the first [10] and, until the early 1980s, the most popular method of growing epitaxial layers of GaN [11][12][13]. It is almost remarkable that GaN films grown by HVPE in the 1970s [12,14] can still be considered to be of state-of-the-art quality, even by present standards.…”