Properties of a-Si:H and a-(Si,Ge):h films grown using combined hot wire–ECR plasma processes

Ring, Matt; Dalal, Vikram L.; Muthukrishnan, Kamal

doi:10.1016/j.jnoncrysol.2004.02.022

Cited by 5 publications

(4 citation statements)

References 7 publications

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“…2 shows the microstructure of a-Si:H as a function of substrate temperature, and again we see a-Si:H Urbach Energy vs. Temperature at 105 mTorr-cm Urbach energy values for a-Si:H that exhibit a trend for decreasing E ov with increased substrate temperatures[46] …”

mentioning

confidence: 63%

“…This material showed very high photosensitivity and photoconductivity values when deposited either by HWCVD or HWECR. that the ions produce a reduced microstructure [35,46], indicating a more ordered system, until higher substrate temperatures are used.…”

Section: : Comparison Of Hot-wire and Hw-ecr Materialsmentioning

confidence: 99%

“…Figure 4.6 shows these results for three band gaps of a-SiGe:H material. Plasma Power (W) Figure 4.6: Photo to dark conductivity ratio as a function of plasma power for three bandgap materials deposited by HW-ECR [46] the amount of germanium incorporated into the film, which has lower bond energies with hydrogen; therefore fewer, less energetic ions will help to remove excess hydrogen efficiently. In addition, the filament temperature was held constant through these experiments, and therefore the etching action of hydrogen radicals produced by the hot filament would aid with the effective removal of excess hydrogen.…”

Section: 2: Ecr Plasma Effectsmentioning

confidence: 99%

“…a-Si:H microstructure (R) as a function of substrate temperature indicating improvement of R with ion bombardment[46] …”

mentioning

confidence: 99%

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The effects of ion bombardment during deposition upon the properties of hydrogenated amorphous silicon-germanium thin films and photovoltaic devices

Ring

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mentioning

confidence: 63%

Section: : Comparison Of Hot-wire and Hw-ecr Materialsmentioning

confidence: 99%

Section: 2: Ecr Plasma Effectsmentioning

confidence: 99%

“…a-Si:H microstructure (R) as a function of substrate temperature indicating improvement of R with ion bombardment[46] …”

mentioning

confidence: 99%

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The effects of ion bombardment during deposition upon the properties of hydrogenated amorphous silicon-germanium thin films and photovoltaic devices

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Solar cell research and development using the hot wire CVD process

Mahan

2004

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Structural and optoelectronic properties of silicon germanium alloy thin films deposited by pulsed radio frequency plasma enhanced chemical vapor deposition

Bhaduri

Chaudhuri

Williamson

et al. 2008

Journal of Applied Physics

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Hydrogenated amorphous silicon germanium (a-SiGe:H) alloy films are still under study to improve their incorporation into tandem solar cells. In this paper we have investigated the quality of films deposited in a radio frequency powered plasma enhanced chemical vapor deposition unit. Two series of samples were prepared either from a mixture of silane and germane diluted into hydrogen or from the same mixture to which a small amount of argon was added. The applied rf power at 13.56 MHz was either continuous or modulated by a square wave pulse at a frequency of 1356 kHz. Different films were deposited in the two series controlling the time the plasma was “on.” The ratio of the on time to the total period of the modulation, the duty cycle, was varied between 100% (continuous mode) and 50%. The plasma during deposition as well as structural and optoelectronic properties of the resulting films was studied with several techniques. We found an optimum in the transport properties for a duty cycle of 75%: an ambipolar diffusion length of the order of 100 nm for a material presenting a bandgap of 1.44 eV. To explain this promising result, we present a discussion on the growth mechanisms of such layers linking the structural results to the transport data.

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Properties of a-Si:H and a-(Si,Ge):h films grown using combined hot wire–ECR plasma processes

Cited by 5 publications

References 7 publications

The effects of ion bombardment during deposition upon the properties of hydrogenated amorphous silicon-germanium thin films and photovoltaic devices

The effects of ion bombardment during deposition upon the properties of hydrogenated amorphous silicon-germanium thin films and photovoltaic devices

Solar cell research and development using the hot wire CVD process

Structural and optoelectronic properties of silicon germanium alloy thin films deposited by pulsed radio frequency plasma enhanced chemical vapor deposition

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