Solar cell research and development using the hot wire CVD process

Mahan, A. H.

doi:10.1016/j.solener.2004.06.008

Cited by 4 publications

(2 citation statements)

References 31 publications

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“…The hydrogenated amorphous silicon nitride (a-SiN x :H) film deposition using HWCVD over PECVD is rapidly adopted by different industries due to the less H-contents in the film, high deposition rate, 80% SiH 4 gas utilization, and deposition scalability. 13,14 Different deposition conditions used in various SiN x films deposition techniques are also listed in Table 1.…”

Section: Fabrication Techniquesmentioning

confidence: 99%

SILICON QUANTUM DOTS GROWTH IN SiN_x DIELECTRIC: A REVIEW

Panchal

Mathew

et al. 2009

NANO

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This paper reviews research works carried out on silicon quantum dots (Si-QDs) embedded in the silicon nitride (SiN x ) dielectric matrix films with different fabrication techniques and different characteristics. The advantages of SiN x as a dielectric compared to silicon dioxide (SiO 2 ) for SiQDs from a device point of view are discussed. Various fabrication techniques along with different optimized deposition conditions are summarized. The typical results of structural characteristics of the films with Raman spectroscopy and Transmission Electron Microscopy (TEM) are discussed. The origin of photoluminescence (PL) from the films and the chemical compositional analysis such as X-Ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR) and Secondary Ion Mass Spectroscopy (SIMS) analysis of the films are also made available in brief. The charge conduction mechanism in the films with metal-insulator-semiconductor (MIS) structure, with their electrical characterization like capacitance-voltage (C-V ) and current-voltage (I-V ) measurements are presented.

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Section: Fabrication Techniquesmentioning

confidence: 99%

SILICON QUANTUM DOTS GROWTH IN SiN_x DIELECTRIC: A REVIEW

Panchal

Mathew

et al. 2009

NANO

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“…[3,4] The n-i-p cells using poly-Si as the i-layer have been investigated by many groups, yielding efficiencies greater than 7 %. [5][6][7][8] Hydrogenated amorphous silicon (a-Si:H) films can be obtained using HWCVD with pure silane without hydrogen dilution. This has received considerable attention as an alternative approach for the synthesis of a-Si:H. [1,2] In the HWCVD process, the hydrogen/silane gas mixture ratio (H 2 /SiH 4 ) and substrate temperature (T s ) were confirmed to have large effects on the microstructure of the Si film, such as Si phase transition from amorphous to microcrystalline and polycrystalline.…”

Section: Introductionmentioning

confidence: 99%

Incubation Effects upon Polycrystalline Silicon on Glass Deposited by Hot‐Wire CVD

Lien

Mao

et al. 2007

Chemical Vapor Deposition

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A growth mechanism diagnosis for high-rate, polycrystalline silicon deposition using hot-wire CVD is explored in this article. The effects of various deposition parameters on the Si film growth are investigated by Raman spectroscopy and transmission electron microscopy (TEM) measurements, with special attention paid to the crystalline and amorphous phases. It is found that the H 2 /SiH 4 ratio and substrate temperature (T s ) are the essential process parameters in determining the crystalline phase and the incubation thickness of the as-deposited Si film. Under low hydrogen dilution conditions, an amorphous incubation layer was formed and degraded the crystalline fraction of the Si film. The incubation thickness prior to the nucleation decreases with the increase of the hydrogen dilution ratio. Under higher H 2 /SiH 4 ratios (≥50), the amorphous phase deposited on the substrate could be etched selectively by the atomic hydrogen. As a consequence, nucleation of small crystallite occurs directly on the substrate. At low substrate temperatures, the deposition process shows the disadvantages of small grain size and low crystallinity. The poly-Si film can be deposited from the seed layer under high T s conditions (>350°C) where the Si appears singly crystallized at the initial stage and then grows epitaxially.

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