The effects of ion bombardment during deposition upon the properties of hydrogenated amorphous silicon-germanium thin films and photovoltaic devices

Fabrication of high quality, low bandgap amorphous Silicon & amorphous Silicon Germanium alloy solar cell by Chemical Annealing

“…A detailed study on the effect of Ion bombardment on A-SiGe quality had been done by Matthew Ring [82]. He and other research groups [83], [84] suggested that although ion bombardment is beneficial to the deposition of amorphous semiconductors, as increased ion bombardment energy improves the material to a certain extent, excess of it can however harm material property.…”