Properties of 1.3 μm InGaNAs laser material grown by MBE using a N2/Ar RF plasma

Molecular beam epitaxy growth of GaInNAs(Sb) double quantum wells with bright and narrow photoluminescence

“…The PL signal was detected using a grating coupled to an InGaAs detector array. In our optimization study we noted similar characteristics as in previous work [19]: with increasing temperature the RTA increases the PL intensity, blueshifts the emission wavelength and reduces the full width at half maximum (FWHM) (Fig. 10).…”

Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb∕GaAsN∕GaAs quantum well tailored at 1.5μm: The energy level structure and the Stokes shift

“…For these reasons, other approaches were developed to redshift the emission wavelength and maintain good optical quality. 16 One of them is to introduce strain compensated Ga͑In͒NAs layers to this GaInNAs/ GaAs QW structure, [17][18][19][20][21][22][23][24] the active region of such a laser structure is a step-like QW. The other approach is to incorporate Sb atoms into GaInNAs compound.…”

Role of ion damage on unintentional Ca incorporation during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides using N2∕Ar source gas mixtures

“…This result was not masked by other effects causing Ca incorporation associated with growths at low temperature and/or nitrogen incorporation. Then, N 2 can be mixed into the precursor gas 35 to grow the subsequent dilute nitride materials without any unintentional Ca incorporation. A likely explanation for this is that the ion flux is about five orders of magnitude lower than the total flux from the plasma source, which may be why the other two factors are so much more dominant.…”