Properties and Applications of Silicides

Murarka, S. P.

doi:10.1007/978-94-009-0917-5_7

Cited by 6 publications

(4 citation statements)

References 83 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recent achievements in microelectronics and other high technologies demonstrate a growing necessity in improving and further developing copper applications [37]. One of the most pressing issues is an increasing demand for epitaxially grown Cu films on non-conducting substrates and fabrication of smooth copper films, to serve as a growth template for device structures, such as tunnelling magneto-resistance devices [38].…”

Section: Discussionmentioning

confidence: 99%

Adhesion trends and growth mode of ultra-thin copper films on MgO

Zhukovskii¹,

Kotomin²,

Fuks³

et al. 2004

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Ab initio simulations are performed for Cu atoms adsorbed on the perfect MgO(001) substrate, with an ordered metal coverage varied from 1 4 monolayer (ML), i.e. almost single atoms, up to 1 ML. A strong dependence of the adhesion energy and the sub-monolayer film distance from the substrate on the surface coverage and adsorbate positions (Mg 2+ or O 2− ) is discussed. The nature of interfacial bonding at all coverages is physisorption. When increasing Cu atomic fraction, a decrease of the substrate-induced polarization of adatoms accompanied by an increase of both in-plane metallic bonding and the interfacial distance has been found. Combining results of ab initio calculations with thermodynamic theory (taking into account the lattice mismatch), we show that the metal cluster formation becomes the predominant growth mode even at low Cu coverages, in agreement with experiment.

show abstract

Section: Discussionmentioning

confidence: 99%

Adhesion trends and growth mode of ultra-thin copper films on MgO

Zhukovskii¹,

Kotomin²,

Fuks³

et al. 2004

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…To form a reliable mechanical contact of Pd with the substrate the sample was thermally annealed in vacuum at a temperature of 350 • C for 10 min. According to [7], such a process results in the diffusion of the metal into the silicon and the formation of Pd 2 Si at the metal/silicon interface. To remove the anodic oxide mask the samples were immersed in a 200 g l −1 water solution of CrO 3 .…”

Section: Methodsmentioning

confidence: 99%

A study of the self-aligned nanometre scale palladium clusters on silicon formation process

Гаврилов¹,

Lemeshko²,

Shevyakov³

et al. 1999

Nanotechnology

View full text Add to dashboard Cite

The possibility of the self-aligned formation of Pd/Pd2Si/Si nanostructures on a single-crystal silicon substrate is shown. A porous anodic oxide film of Al was used as a mask which determines the size and shape of the nanostructures. A thin Al film was first deposited on the silicon substrate and then transformed in a nanoporous oxide by the well known anodic treatment procedure in a sulfuric acid and water solution. It is shown by atomic force microscopy that nanoscale Pd clusters with diameters equal to the size of pores in anodic Al remain at the surface of silicon substrate after cathode deposition of Pd into the pores, vacuum thermal annealing and chemical etching of the Al2O3 mask. In addition, we determine the dependencies of the size and shape of the nanoclusters on the mask formation regimes and the Pd deposition conditions.

show abstract

“…In response to the thermodynamical variables, transition metal monosilicides have been subjected to significant research for the purpose of determining their unique thermoelectric capabilities, superconductivity, structural phase transitions as well as their resistance to oxidation [1][2][3][4][5][6][7][8][9][10]. In particular, researchers have done in-depth investigations on the high-pressure transformations of transition metal monosilicides.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Investigation of Pressure Dependent Structural and Elastic Properties of MnSi Compound

Malviya,

Jain,

Dixit

et al. 2023

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

MnSi is a metallic compound that exhibits a structural phase transition as a function of pressure. At ambient conditions, MnSi has a cubic structure such as NaCl type crystal structure. However, at high pressures, it undergoes a structural phase transition to a CsCl type crystal structure. The pressure-dependent structural phase transition in MnSi has been studied using various experimental and theoretical techniques. In the present work, we have used an efficient inter-ionic potential approach to predict pressure dependent structural phase change and associated volume collapse in MnSi. Therein, the potential includes the long-range Coulomb, van der Waals (vdW) interaction, and the short-range repulsive interaction up to second neighbour ions. It has been demonstrated that the Hafemeister and Flygare approach successfully evaluates the equation of state for change in volume with respect to applied pressure. We have identified a structural phase transition from B1(NaCl) type structure to B2 (CsCl) type structure in this compound. The estimated value of phase transition pressure (Pt) is 42 GPa, which is consistent with the available reported data. The identified first order phase transformation showed a volume collapse of about 10% in the vicinity of transition. In addition, we have also investigated second order of elastic constants for MnSi compound.

show abstract

Properties and Applications of Silicides

Cited by 6 publications

References 83 publications

Adhesion trends and growth mode of ultra-thin copper films on MgO

Adhesion trends and growth mode of ultra-thin copper films on MgO

A study of the self-aligned nanometre scale palladium clusters on silicon formation process

Theoretical Investigation of Pressure Dependent Structural and Elastic Properties of MnSi Compound

Contact Info

Product

Resources

About