“…Besides, in the previous work 18 the oxidized silicon wafer was used only as a microscopically flat dielectric material, i.e., the semiconductor nature of the substrate material was neither of interest nor of importance. Therefore, employing a single-crystal, doped Si wafer as the substrate demands careful consideration of electrochemical processes occurring at the respective Al/Si interface during anodizing 20 to avoid unfavorable perforation of the isolating alumina barrier layer, oxidation of the substrate, or transferring an array of the alumina pores into the silicon wafer. 21 In the present paper, we have prepared two series of porous anodic alumina films onto n-type single-crystal Si wafers in tartaric and malonic acid electrolytes, of variable pore sizes and optimized pore configurations, and employed these Si-supported anodic films as templates for magnetron sputtering WO 3 layers.…”