Propagation loss in GaN-based ridge waveguides

Skorka, Orit; Meyler, B.; Salzman, J.

doi:10.1063/1.1741025

Cited by 12 publications

(4 citation statements)

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“…The optical loss is mainly due to light scattering by etched sidewalls of the waveguide and can be minimized through techniques such as wavelength selective coating, gentle wet etching following plasma etching, etc. This measured value of optical loss in Er-doped GaN devices is smaller than an earlier reported value of 4.45 cm −1 for undoped GaN ridge waveguide devices measured at visible ͑488 nm͒ wavelength 15. The small value of optical loss in GaN:Er waveguide is what we expected because 1.54 m wavelength is far from the band gap of the guiding medium, GaN ͑362 nm͒.…”

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confidence: 70%

Erbium-doped GaN optical amplifiers operating at 1.54 μm

Dahal

Ugolini

Lin

et al. 2009

Applied Physics Letters

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Strip optical waveguides based on erbium ͑Er͒-doped AlGaN/GaN:Er/AlGaN heterostructures have been fabricated and characterized in the optical communication wavelength window near 1.54 m. The propagation loss of these waveguide amplifiers have been measured at 1.54 m and found to be 3.5 cm −1. Moreover, the optical amplification properties of the waveguides were measured using a signal input at 1.54 m and a broadband GaN light-emitting diode at 365 nm as pump source. A relative signal enhancement of ϳ8 cm −1 was observed. The implications of such devices in photonic integrated circuits for optical communications are discussed.

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confidence: 70%

Erbium-doped GaN optical amplifiers operating at 1.54 μm

Dahal

Ugolini

Lin

et al. 2009

Applied Physics Letters

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“…During the operation of waveguides, the optical losses of light injected into the waveguide are also a critical parameter. 17 The smaller the losses in the GaN structure, the better the performance of the waveguide device in transmitting light. By injecting light through a prism with the Metricon setup, we measured the propagating wave intensity in the GaN layer wherein we excite the fundamental effective guided mode in this layer.…”

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Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy

Stolz

Cho

Dogheche

et al. 2011

Applied Physics Letters

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International audienceThe waveguideproperties are reported for wide bandgap gallium nitride(GaN) structures grown by metal organic vapor phase epitaxy on sapphire using a AlN/GaN short period-superlattice (SPS) buffer layer system. A detailed optical characterization of GaN structures has been performed using the prism coupling technique in order to evaluate its properties and, in particular, the refractive index dispersion and the propagation loss. In order to identify the structural defects in the samples, we performed transmission electron microscopy analysis. The results suggest that AlN/GaN SPS plays a role in acting as a barrier to the propagation of threading dislocations in the active GaN epilayer; above this defective region, the dislocations density is remarkably reduced. The waveguide losses were reduced to a value around 0.65dB/cm at 1.55μm, corresponding to the best value reported so far for a GaN-based waveguide

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“…Various optical components have already been demonstrated based on the III‐N material system, including arrayed waveguide gratings , directional couplers , all‐optical modulators and more . Previous studies, using various techniques and designs, reported propagation losses of GaN based WGs ranging from about 10 to more than 100 dB/cm . These values are much worse than the losses encountered when using Si or other III‐V materials (e.g., GaAs and InP), which are a few tenths of dB/cm .…”

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Low propagation loss in GaN/AlGaN‐based ridge waveguides

Westreich

Katz

Paltiel

et al. 2015

Physica Status Solidi (a)

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We report the fabrication and characterization of GaN/AlGaN ridge waveguides (WG). The "ridge" design was chosen to ensure low propagation loss. The fabrication process included four steps that could be easily regulated. GaN and AlGaN cladding layers were grown on a sapphire substrate by MOCVD. Shallow ridges were formed in the top cladding layer using ICP-RIE. After etching, samples were diced and WG facets were formed by polishing the samples opposite sides. The propagation loss at 1.56 mm was evaluated by measuring Fabry-Perot resonances from end-facet reflections. Losses as low as 1 dB/cm were measured for single mode WGs. Such low-loss two-dimensional WG could advance the use of GaN in integrated optoelectronics wave guiding components.Schematic illustration of GaN ridge WG structure (left) and a SEM image of a 10 mm wide ridge WG structure (right).

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Propagation loss in GaN-based ridge waveguides

Cited by 12 publications

References 11 publications

Erbium-doped GaN optical amplifiers operating at 1.54 μm

Erbium-doped GaN optical amplifiers operating at 1.54 μm

Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy

Low propagation loss in GaN/AlGaN‐based ridge waveguides

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