Erbium-doped GaN optical amplifiers operating at 1.54 μm

Dahal, R.; Ugolini, C.; Lin, J. Y.; Jiang, Hongxing; Zavada, J. M.

doi:10.1063/1.3224203

Cited by 46 publications

(33 citation statements)

References 15 publications

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“…We have also assumed the attenuation of the waveguide of 1.5 dB/mm. 10 With 50 mW pump power, the theoretical power spectral density emitted from the waveguide is Ϫ55 dBm/2 nm, which is about 1 dB higher than the measured value. This reduced efficiency is attributed to the nonradiative recombination and Auger recombination for the transition from the metastable level ͑ 4 I 13/2 ͒ to the ground level ͑ 4 I 15/2 ͒.…”

Section: ͑1͒mentioning

confidence: 83%

“…Optical amplification in Er-doped GaN waveguide has also been demonstrated using a 365 nm light emitting diode optical pumping source. 10 UV pumping above the GaN bandgap excited free electrons and holes and subsequently the electrons and holes transfer their energy to the doped erbium ions and produce sufficient carrier population on the 4 I 13/2 band which is responsible for emission in the 1550 nm wavelength window. This above bandgap excitation was demonstrated to be more efficient than below bandgap excitation.…”

mentioning

confidence: 99%

“…10,11 In fact, pumping at near infrared wavelengths to populate carriers in 4 I 13/2 energy band has an advantage of providing higher photon conversion efficiency than using higher energy photons such as in UV and green wavelengths, which avoided transitions through intermediate energy levels and the associated energy loss during these transitions.…”

mentioning

confidence: 99%

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Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength

Wang

Hui

Dahal

et al. 2010

Applied Physics Letters

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We report the characteristics of an erbium-doped GaN semiconductor waveguide amplifier grown by metal-organic chemical vapor deposition. We demonstrated that both 980 and 1480 nm optical pumping were efficient to create population inversion between the I413/2 and I415/2 energy levels. The carrier lifetime in the I413/2 energy band was measured to be approximately 1.5 ms in room temperature, which is slightly shorter than that in erbium-doped silica due to the interaction between the erbium ions and the semiconductor lattice structure. But it is significantly longer than the carrier lifetime in a typical semiconductor optical amplifier which is in the nanosecond regime.

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Section: ͑1͒mentioning

confidence: 83%

mentioning

confidence: 99%

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Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength

Wang

Hui

Dahal

et al. 2010

Applied Physics Letters

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“…These materials are of great importance for integrated optical devices. [1,2] In terms of material science, as an alternative to the erbium-doped fiber amplifiers. the incorporation of the magnified function in an integrated optical circuit, which is designed for routing and switching optical signals, [3,4] requires the development of materials which exhibit high amplification efficiencies.…”

Section: Introductionmentioning

confidence: 99%

Effect of Humidity and UV Assistance on the Properties of Erbium Doped Yttrium Oxide Films Prepared by Aerosol‐MOCVD

Salhi

Roussel

Chaudouet

et al. 2011

Chemical Vapor Deposition

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International audienceErbium-doped yttrium oxide films are prepared from yttrium acetylacetonate (Y(C(5)H(7)O2)(3)) and erbium (III) tris(2,2,6,6-tetramethyl-3,5-heptanedionate) (Er(TMHD)(3)) under standard conditions by UV-aerosol-assisted metal-organic (AA-MOCVD), using air with controlled humidity as the carrier gas. The structure and deposition rate are optimized by studying three experimental parameters; substrate temperature, relative humidity (RH) of the carrier gas, and UV-assistance. Taking all these parameter effects under consideration, the maximum deposition rates are reached under low humidity air and with UV-assistance. Nevertheless, as-deposited Er:Y(2)O(3) films crystallize in the Y(2)O(3) cubic structure and present a very low organic contamination when depositions take place under high air humidity and with UV-assistance. The refractive index of yttrium oxide films under these conditions are relatively high, reaching 1.86 when deposited at 410 degrees C

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“…Dahal et al [58] demonstrated a strip of optical waveguides based on Er-doped AlGaN/GaN:Er/AlGaN heterostructures, which were characterized in the optical communication wavelength window near 1.54 μm. The propagation loss of this waveguide amplifier at 1.54 μm was 3.5 cm À1 , and a relative signal enhancement of 8 cm À1 was observed.…”

Section: Propagation Guiding and Localization Of Resonance Modesmentioning

confidence: 99%

Plasmonic Nanostructure Arrays Coupled with a Quantum Emitter

Rivera¹,

Silva²,

Ledemi

et al. 2014

SpringerBriefs in Physics

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In the previous chapter, we saw that a metal nanoparticle (NP) can generate localized surface plasmon resonance (LSPR), as a result of the resonance of free electrons on a curved surface. We also mentioned the main difference between surface plasmon polaritons (SPP) and LSPR, namely that SPPs are propagating waves, while LSPR is a nonpropagating excitation of free electrons in a metallic nanostructure coupled to an EM field. In this chapter, we will see that SPPs in restricted geometries (such as nanoantennas or nanocavities) can also generate LSPR. Nevertheless, the conditions for excitation are different. LSPR can be excited by direct application of light, whereas SPPs can be excited by matching the frequency and momentum of the excitation light and the SPPs. For example, under laser illumination, an antenna develops a strong dipole along the antenna. Charge oscillations inside each arm give rise to strong EM fields inside the feedgap of the antenna. When the antenna is resonant at optical frequencies, it can be called a resonant nanoantenna. In this case, with sufficiently close spacing with respect to a quantum emitter (QE) and nanoantenna, they can interact forming an electric dipole.On the other hand, the extremely high localized fields in plasmonic nanocavities or plasmonic resonators, although they generally have low quality factors Q, are able to confine modes to sub-wavelength volumes V. Thus, plasmonic nanocavities become much more competitive with conventional optical resonators for applications where a resonance confined to a small volume is desirable. Hence, a nanocavity can profoundly change the number of EM modes and decay pathways available to a QE, increasing or decreasing its radiative decay rate. In both cases (nanoantenna and nanocavity), we can manipulate the local density of optical states (LDOS) of the QE, and increase the efficiency of light emission from the QEs.

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Erbium-doped GaN optical amplifiers operating at 1.54 μm

Cited by 46 publications

References 15 publications

Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength

Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength

Effect of Humidity and UV Assistance on the Properties of Erbium Doped Yttrium Oxide Films Prepared by Aerosol‐MOCVD

Plasmonic Nanostructure Arrays Coupled with a Quantum Emitter

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