Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD

Fonrodona, M.; Soler, D.; Villar, F.; Escarré, Jordi; Asensi, J.M.; Bertomeu, J.; Andreu, J.

doi:10.1016/j.tsf.2005.07.146

Cited by 12 publications

(5 citation statements)

References 26 publications

(44 reference statements)

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“…Two main deposition techniques have been established to prepare nc-Si:H films, including plasma enhanced chemical vapor deposition (PECVD) [3] and hot-wire chemical vapor deposition (HWCVD) [4][5][6][7][8]. HWCVD appears to be a promising deposition method because of higher deposition rates, suitability for scaling up in large area industrial applications and absence of powder formation and ion bombardment in comparison to the standard PECVD [9].…”

Section: Introductionmentioning

confidence: 99%

Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

Luo

Zhou

Chan

et al. 2008

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

Luo

Zhou

Chan

et al. 2008

Applied Surface Science

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“…H ydrogenated microcrystalline silicon (µc-Si:H), or nanocrystalline silicon (nc-Si:H), is a composite material, consisting of nanosized silicon crystallites surrounded by an amorphous tissue, with optical properties similar to those of crystalline silicon (c-Si). [1][2][3][4][5][6][7][8] In most cases, µc-Si:H is grown by plasma-enhanced chemical vapor deposition (PECVD) 1,[4][5][6][7] or hot-wire CVD, 8) similarly to hydrogenated amorphous silicon (a-Si:H). Compared with a-Si:H, µc-Si:H has several advantages such as a high carrier mobility and a wide spectral response (up to 1.1 eV), and thus µc-Si:H is attractive for various opt-electronic applications including thin-film transistors, [9][10][11] solar cells, [2][3][4][5]7,8,12) and optical sensors.…”

mentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8] In most cases, µc-Si:H is grown by plasma-enhanced chemical vapor deposition (PECVD) 1,[4][5][6][7] or hot-wire CVD, 8) similarly to hydrogenated amorphous silicon (a-Si:H). Compared with a-Si:H, µc-Si:H has several advantages such as a high carrier mobility and a wide spectral response (up to 1.1 eV), and thus µc-Si:H is attractive for various opt-electronic applications including thin-film transistors, [9][10][11] solar cells, [2][3][4][5]7,8,12) and optical sensors. 13) Another property that makes µc-Si:H suitable for photovoltaic applications is its high tolerance to light soaking, 5) while a-Si:H suffers from light-induced degradation.…”

mentioning

confidence: 99%

Thin-film microcrystalline silicon solar cells: 11.9% efficiency and beyond

Sai

Matsui

Kumagai

et al. 2018

Appl. Phys. Express

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High-efficiency thin-film hydrogenated microcrystalline silicon solar cells (µc-Si:H) were developed using a periodically textured substrate at a relatively high growth rate of ∼1 nm s−1. A record efficiency of 11.9% was independently confirmed in a µc-Si:H cell with an absorber thickness of approximately 2 µm. An improvement in fill factor contributed largely to realizing the record efficiency. The potential for further efficiency improvements was examined on the basis of suns–VOC measurement, indicating that an efficiency of 12.5% is practically achievable.

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“…The demands for economically viable renewable energy sources are increasing day by day in modern society and solar energy has a great potential to satisfy the future need for such energy sources. Due to the shortcomings of the silicon-based solar energy devices [1,2], the strategy of using molecular component-based devices to build a large-scale solar power facility has developed rapidly over the past few decades. With the development of dye-sensitized solar cells (DSSCs), molecular and nanoscale devices pose a challenge to the traditional solid-state photovoltaic technology [3].…”

Section: Introductionmentioning

confidence: 99%

Theoretical Investigations of Dye-Sensitized Solar Cells

Chen,

Vishart,

Sauer

et al. 2023

J Nanotechnol Nanomaterials

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This presentation considers theoretical investigations of dye-sensitized solar cells (DSSC). Theoretical methods were applied to investigate the interactions between titanium dioxide nanoparticles and sensitizers. The ONIOM model was used to obtain the geometries of different conformers of dye molecules with TiO2 and their binding energies. TD-DFT calculations were carried out to obtain the absorption spectra and the relative orbital energy levels of sensitizers and TiO2. The electronic couplings between different sensitizers and TiO2 were calculated using the fragment charge difference method. The redox potentials of the sensitizers are calculated to complete the full working cycle of a DSSC. We observed that the -COOH group is not the only possible binding site, and the sensitizers are more likely to be adsorbed horizontally on the TiO2 surface instead of being perpendicular to the surface having the -COOH group as a linker. The TiO2 nanoparticle was found to have minor influence on the absorptions of the sensitizers with the spectra shift smaller than 0.2 eV. TiO2 has more influence on the absorptions of softer and larger molecules because the interactions between sensitizers and TiO2 twist the conjugated chromophore structures. Compared to the neutral form, the deprotonated anion conformers of the sensitizers have larger binding energy and lower LUMO level against conduction band of TiO2. The gap between the LUMO of sensitizers and conduction band edge of TiO2 might indicate the coupling strength between the sensitizers and TiO2. Several binding groups have shown promising properties for interacting with the TiO2 nanoparticle and generally deprotonated anion forms of the dyes were strongly bonded to the TiO2 nanoparticle. The model and associated calculated results provide close agreement with experimental data and give crucial atomistic information of the relevant processes in dye-sensitized solar cells.

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Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD

Cited by 12 publications

References 26 publications

Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

Thin-film microcrystalline silicon solar cells: 11.9% efficiency and beyond

Theoretical Investigations of Dye-Sensitized Solar Cells

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