The possible use of poly(ethylene naphthalate) as substrate for thin silicon solar cells has been studied in this paper. The transparency of this polymer makes it a candidate to be used in both substrate and superstrate configurations. ZnO:Al has been deposited at room temperature on top of PEN. The resulting structure PEN/ZnO:Al presented good optical and electrical properties. PEN has been successfully textured (nanometer and micrometer random roughness) using Hot-Embossing Lithography. Reflector structures have been built depositing Ag and ZnO:Al on top of the stamped polymer. The deposition of these layers did not affect the final roughness of the whole. The reflector structure has been morphologically and optically analysed to verify its suitability to be used in solar cells.
In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a very thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by Spectroscopic Ellipsometry in the UV-visible range. These measurements reveal that the microstructure of the n-
The growing interest in using thinner wafers (<200 µm) requires the development of low temperature passivation strategies for the back contact of heterojunction solar cells. In this work, we investigate low temperature deposited back contacts based on boron-doped amorphous silicon films obtained by Hot-Wire CVD.The microstructure of the deposited thin films has been comprehensively studied by have been fabricated with total-area conversion efficiencies up to 14.5%.
Amorphous silicon n-i-p solar cells have been fabricated entirely by Hot-Wire Chemical Vapour Deposition (HW-CVD) at low process temperature <150 ºC. A textured-Ag/ZnO back reflector deposited on Corning 1737F by rf magnetron sputtering was used as the substrate. Doped layers with very good conductivity and a very less defective intrinsic a-Si:H layer were used for the cell fabrication. A double n-layer (µc-Si:H/a-Si:H) and µc-Si:H p-layer were used for the cell. In this paper, we report the characterization of these layers and the integration of these layers to fabricate solar cell at low process temperature.An initial efficiency of 4.62% has been achieved for the n-i-p cell deposited at temperatures below 150 ºC over glass/Ag/ZnO textured back reflector.
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