An ordered anodic porous alumina membrane has been used as a lithographic mask of SF6 fast atom beam etching to generate a 100 nm period antireflection structure on a silicon substrate. The antireflection structure consists of a deep hexagonal grating with 100 nm period and aspect ratio of 12, which is a fine two-dimensional antireflection structure. In the wavelength region from 400 to 800 nm, the reflectivity of the silicon surface decreases from around 40% to less than 1.6%. The measured results are explained well with the theoretical results calculated on the basis of rigorous coupled-wave analysis.

All existing solar cell materials including hybrid perovskites show rather small absorption coefficient (α) of ≈104 cm−1 in the bandgap (Eg) transition region. The weak band‐edge light absorption is an essential problem, limiting conversion efficiency particularly in a tandem solar cell. Herein, all distorted chalcogenide perovskites (BaZrS3, SrZrS3, BaHfS3, and SrHfS3) are found experimentally to exhibit extraordinary high α exceeding 105 cm−1 near Eg, indicating the highest band‐edge α among all known solar cell materials. The giant absorption in the Eg region, which is consistent with the first principles, arises from the intense p–d interband transition enabled by dense S 3p valence states. For solar cell application, low‐gap BaZrS3 derivatives, Ba(Zr,Ti)S3 and BaZr(S,Se)3, are further synthesized. Among the possible candidates of top‐cell materials, an earth‐abundant and nontoxic Ba(Zr,Ti)S3 alloy shows great potential, reaching a maximum potential efficiency exceeding 38% in a chalcogenide perovskite/crystalline Si tandem architecture.

Recently, submicron textures have been researched and applied to multicrystalline silicon solar cells in order to improve their optical performance. In this study, the antireflection and light trapping effects of submicron surface textures in crystalline Si (c‐Si) solar cells were quantitatively investigated by numerical simulations based on Maxwell's equations with a simple two‐dimensional (2D) surface grating model. The calculated results showed that the surface reflection loss can be effectively reduced by using submicron Si surface gratings with appropriate aspect ratios. On the other hand, higher order diffractions that are caused by surface gratings that increase optical path lengths and light absorption near the band gap wavelength are dominant only for those with periods greater than 0·5 µm. From these results, it was inferred that submicron textures are effective for light trapping as well as for antireflection in thin c‐Si solar cells if appropriate dimensions are chosen. Copyright © 2007 John Wiley & Sons, Ltd.

In this article, the light-trapping effect of textured back surface reflectors in thin-film Si solar cells is investigated. A unique substrate with a periodic dimple pattern has been developed by utilizing anodic oxidation of Al as a self-ordering process. n-i-p hydrogenated microcrystalline Si (μc-Si:H) cells fabricated on the Al substrate with a period of 0.9 μm show an improved infrared response compared to those fabricated on randomly textured substrates. A high short circuit current density of 24.3 mA/cm2 has been achieved in a 1-μm-thick μc-Si:H cell by adopting the patterned Al substrate.

Spectral emittance and thermal stability of two-dimensional W gratings are investigated to obtain high-temperature resistive selective emitters. Numerical calculations based on rigorous coupled-wave analysis are performed to determine the structural profile of gratings with good spectral selectivity. According to the determined parameters, two-dimensional W gratings composed of rectangular microcavities with the period of 1.0 μm are fabricated on single crystalline and polycrystalline W substrates. The grating shows a strong emission peak which can be explained by the confined modes inside the cavities. The grating with 200 nm wall thickness made from a single crystalline W shows very high thermal stability over 1400 K, while the polycrystalline grating is deformed at a high temperature because of the grain growth.

Two-dimensional surface-relief gratings with a period of 1.0–0.2μm composed of rectangular microcavities were fabricated on single crystalline W substrates to develop spectrally selective radiators for thermophotovoltaic generation. The radiators displayed strong emission in the near-infrared region where narrow-band-gap photovoltaic cells could convert photons into electricity. The enhancement of thermal emission was attributed to the microcavity effect. Power generation tests were carried out and the W gratings showed more than two times higher generation efficiency, compared to a SiC radiator. The results showed that the microstructured W radiators behave as good selective radiator, with both high efficiency and high power density.

Thin crystalline silicon (c‐Si) solar cells are highly attractive for realizing light‐weight and flexible wafer‐based solar cells as well as for reducing the material cost. Silicon heterojunction (SHJ) architecture using hydrogenated amorphous silicon (a‐Si:H) is suitable for realizing very thin c‐Si cells, because of its capability of excellent surface passivation. In this work, the potential of very thin c‐Si solar cells is examined by characterizing SHJ solar cells with a wide range of thicknesses from 50 to 400 μm. A trade‐off between the open‐circuit voltage (VOC) and the short circuit current density (JSC) against wafer thickness is clearly observed in these SHJ cells, whereas a decrease in fill factor (FF) is found for thin SHJ cells below 80 μm. The loss analysis for the thin SHJ cells with numerical simulation clarifies that the infrared parasitic absorption loss due to the supporting layers is enhanced for thinner wafers, which limits the JSC in the thin SHJ cells. In addition, it is confirmed that the FF is more sensitive to surface recombination than the VOC, and this tendency becomes more pronounced with the decrease in the wafer thickness. A high efficiency of 22% is achieved in a SHJ solar cell with a thickness of only 46 μm, demonstrating a high potential for flexible high‐efficiency c‐Si solar cells.

A simple fabrication technique for subwavelength structured (SWS) surfaces by means of anodic porous alumina masks directly formed on Si substrates was proposed and demonstrated. By this technique, SWS surfaces were fabricated on polished single-crystalline Si and chemically etched as-cut multicrystalline Si wafers. Smoothly tapered SWS surfaces with a periodicity of 100nm and a height of 300–400nm were obtained. A low reflectivity below 1% was observed from 300to1000nm for both of the wafers, in agreement with numerical simulation. After thermal annealing at 800°C, the reflectivity of the SWS surface increased to 3%.