Progress in mid-IR Cr^2+ and Fe^2+ doped II-VI materials and lasers [Invited]

Mirov, Sergey; Fedorov, Vladimir V.; Martyshkin, Dmitry; Moskalev, Igor; Mirov, Mike; Gapontsev, Valentin

doi:10.1364/ome.1.000898

Cited by 125 publications

(61 citation statements)

References 46 publications

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“…Such sources are mostly built on the basis of nonlinear optical conversion techniques, either optical parametric (OPO) or difference frequency generation, resulting in limited efficiency as well as high complexity and price of the system. The compact and cost-effective alternatives to the OPOs are the mode-locked crystalline solid-state lasers based on Cr 2+ -doped chalcogenides [2][3][4]. Due to their broad gain and continuous tunability over a wide wavelength range (~1400 nm [5]), exceeding all known laser types, as well as high power (over 13 W in CW regime [4)], they are perfectly suitable for high power femtosecond pulse generation [6][7][8][9][10].…”

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confidence: 99%

Kerr-lens mode-locked Cr:ZnS laser

Tolstik¹,

Sorokin²,

Sorokina³

2013

Opt. Lett.

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Received Month X, XXXX; revised Month X, XXXX; accepted Month X, XXXX; posted Month X, XXXX (Doc. ID XXXXX); published Month X, XXXX We report the soft-aperture Kerr-lens mode-locked Cr:ZnS laser, generating 550 mW of 69-fs nearly transform-limited pulses at 2.39 µm wavelength. The pulse energy reached 3.8 nJ at 145 MHz repetition rate, limited by the onset of doublepulsing. This corresponds to the shortest-pulse and highest-energy direct femtosecond laser source in the mid-IR. Dispersion compensation was achieved by a single chirped mirror and a thin sapphire plate, making the laser design simple, compact and very stable, operating at ambient air and room temperature. The superb thermal and mechanical properties of Cr:ZnS, exceeding those of Cr:ZnSe and many established femtosecond laser crystals should allow further scaling of output power.

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confidence: 99%

Kerr-lens mode-locked Cr:ZnS laser

Tolstik¹,

Sorokin²,

Sorokina³

2013

Opt. Lett.

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“…:ZnSe samples met with failure [7]. The electrical pumping with the injection mechanism of the excitation that is generally used in semiconductor lasers is inefficient in the case of intraionic transitions.…”

Section: +mentioning

confidence: 99%

“…A new class of compact broadly tunable mid-infrared (Mid-IR) lasers operating over the range under optical pumping has been intensively investigated in recent 15 years [1][2][3][4][5][6][7][8][9][10][11]. These lasers are based on transitions in divalent transition metal (TM) ions (Cr :ZnSe crystals and powders as laser media (see reviews [6,7] and references therein).…”

Section: Introductionmentioning

confidence: 99%

“…These lasers are based on transitions in divalent transition metal (TM) ions (Cr :ZnSe crystals and powders as laser media (see reviews [6,7] and references therein). Recently, the laser oscillation under optical pumping have been demonstrated in Cr 2+ :ZnSe planar waveguide structures fabricated by pulsed laser deposition of the thin film on a sapphire substrate [8].…”

Section: Introductionmentioning

confidence: 99%

“…Recently, the laser oscillation under optical pumping have been demonstrated in Cr 2+ :ZnSe planar waveguide structures fabricated by pulsed laser deposition of the thin film on a sapphire substrate [8]. Cr 2+ :ZnS is also considered as promising laser material [7]. Efficient continuous-wave lasing of Cr 2+ :ZnS crystals under optical pumping has been reported in [10,11].…”

Section: Introductionmentioning

confidence: 99%

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Laser oscillation in Cr2+ :ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism

Vlasenko¹

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The laser oscillation at room temperature in Cr 2+ :ZnS waveguide thin-film structures under electrical pumping with the impact excitation mechanism was first discovered after improvement of some waveguide optical properties. However, lasing turned out to be unstable and ceases soon, which is accompanied by strong weakening the emission recorded from the waveguide edge whereas the emission from the structure face remains intensive. It is shown that the above changes stem from increasing optical losses caused by appearance of light scattering in the structure by inhomogeneities formed during lasing as a consequence the most probably of recrystallization processes in the Cr:ZnS film. Some ways are proposed to improve the lasing stability.

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Solid‐state Crystalline Mid‐IR Lasers

2020

Laser‐based Mid‐infrared Sources and Applications

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Progress in mid-IR Cr^2+ and Fe^2+ doped II-VI materials and lasers [Invited]

Cited by 125 publications

References 46 publications

Kerr-lens mode-locked Cr:ZnS laser

Kerr-lens mode-locked Cr:ZnS laser

Laser oscillation in Cr2+ :ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism

Solid‐state Crystalline Mid‐IR Lasers

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