Laser oscillation in Cr2+ :ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism

Abstract

Abstract. The laser oscillation at room temperature in Cr 2+ :ZnS waveguide thin-film structures under electrical pumping with the impact excitation mechanism was first discovered after improvement of some waveguide optical properties. However, lasing turned out to be unstable and ceases soon, which is accompanied by strong weakening the emission recorded from the waveguide edge whereas the emission from the structure face remains intensive. It is shown that the above changes stem from increasing optical losses caused by appearance of light scattering in the structure by inhomogeneities formed during lasing as a consequence the most probably of recrystallization processes in the Cr:ZnS film. Some ways are proposed to improve the lasing stability.

Photoluminescence and laser properties of active media based on ZnSe doped with Cr, Al, Na from spray pyrolysis deposited films

“…There is no information in the literature on the use of chalcogenide films as sources for doping bulk ZnSe(S) materials with transition metal ions and electrically active impurities. At the same time, it is known about lasing on ZnSe(S):Cr films under optical and electrical excitation [8,9]. Using binary (for example, CrS) and multicomponent (CdS:Cr:(Al/Na) sulfide films as a source of doping for bulk ZnSe samples can theoretically lead to the production of solid solutions with unique optical and structural characteristics.…”