Progress in 2D photonic crystal Fano resonance photonics

Zhou, Weidong; Zhao, Ding; Shuai, Yichen; Yang, Hongjun; Chuwongin, Santhad; Chadha, Arvinder Singh; Seo, Jung‐Hun; Wang, Ken X.; Liu, Victor; Ma, Zhenqiang; Fan, Shanhui

doi:10.1016/j.pquantelec.2014.01.001

Cited by 254 publications

(155 citation statements)

References 237 publications

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“…These unique properties have been extensively harnessed in recent years. A summary of the detailed processing methods of nanomembranes, including their creation, manipulation, etc., and their significant applications can be found elsewhere [16][17][18] .In this work, we first exploit the bonding advantages of SiNMs. In comparison to a regular/bulk Si substrate that is rigid and rather difficult to bond to diamond, the bonding force of SiNMs is much stronger than rigid Si due to its thin thickness.…”

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confidence: 99%

Thermal diffusion boron doping of single-crystal natural diamond

Seo

Mikael

et al. 2016

Journal of Applied Physics

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Abstract:With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occur at the bonded interface between Si and diamond.We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.With the advent of various new renewable energy sources and the emerging need to deliver and convert energy more efficiently, power electronics have received unprecedented attention in recent years. For the last several decades, Si-based power devices have played a dominant role in power conversion electronics. Wide bandgap semiconductor material based power electronics, such as those employing GaN and SiC, are expected to handle more power with higher efficiency than Si-based ones. GaN exhibits higher saturation velocity than Si. However, the thermal conductivity of GaN is low for power conversion systems. Moreover, it is currently difficult to obtain a thick and high quality GaN layer. SiC has its own native substrate, but it has inferior performance matrices (e.g., Johnson's figure of merit) versus GaN. In comparison, diamond exhibits most of the critical material properties for power electronics, except for its small substrate size at present. Diamond has a wide bandgap, high critical electric field, high carrier mobility, high carrier saturation velocities and the highest thermal conductivity among all available semiconductor materials [1][2][3] . Due to its superior electrical properties, the thickness of the highest quality diamond required to block an equivalent amount of voltage is approximately onefifth to one-fourth the thicknesses of GaN or SiC. In particular, the superior thermal conductivity of diamond could greatly simplify the design of heat dissipation and hence simplify entire power electronics modules. Therefore, diamond is considered the best material candidate for power electronics in terms of power switching efficiency, reliability, and system volume and weight.However, besides the lack of large ar...

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confidence: 99%

Thermal diffusion boron doping of single-crystal natural diamond

Seo

Mikael

et al. 2016

Journal of Applied Physics

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“…The detailed processing conditions can be found in the Methods Section and elsewhere. 19,28 Briefly, a lightly doped n-type silicon-on insulator (SOI) wafer with a 340-nm thick Si template layer was implanted with phosphorus and boron, followed by a diffusion step to define the n + , p + and p − wells. Thereafter, the top Si device layer (i.e., the Si NM) was released and the source/drain electrodes, emitter/base/collector electrodes, and SiO dielectric layer were deposited using an ebeam evaporator.…”

Section: Resultsmentioning

confidence: 99%

High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane

et al. 2017

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In this work, we have demonstrated for the first time integrated flexible bipolar-complementary metal-oxide-semiconductor (BiCMOS) thin-film transistors (TFTs) based on a transferable single crystalline Si nanomembrane (Si NM) on a single piece of bendable plastic substrate. The n-channel, p-channel metal-oxide semiconductor field-effect transistors (N-MOSFETs & P-MOSFETs), and NPN bipolar junction transistors (BJTs) were realized together on a 340-nm thick Si NM layer with minimized processing complexity at low cost for advanced flexible electronic applications. The fabrication process was simplified by thoughtfully arranging the sequence of necessary ion implantation steps with carefully selected energies, doses and anneal conditions, and by wisely combining some costly processing steps that are otherwise separately needed for all three types of transistors. All types of TFTs demonstrated excellent DC and radio-frequency (RF) characteristics and exhibited stable transconductance and current gain under bending conditions. Overall, Si NM-based flexible BiCMOS TFTs offer great promises for high-performance and multifunctional future flexible electronics applications and is expected to provide a much larger and more versatile platform to address a broader range of applications. Moreover, the flexible BiCMOS process proposed and demonstrated here is compatible with commercial microfabrication technology, making its adaptation to future commercial use straightforward.

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“…Simple GMR structures comprising a single 1-D periodic layer have been used to create filters, polarizers, and polarization-independent devices with applications in biosensing, communications, and solar cell enhancement [18]- [20]. Similarly, the GMR concept can easily be adapted into 2-D structures to offer further advantages in each of these applications [21]- [23]. To achieve coherent perfect absorption within a GMR device it is necessary to implement interaction of multiple coherent beams entering the device.…”

Section: Methodsmentioning

confidence: 99%

Experimental Evidence for Coherent Perfect Absorption in Guided-Mode Resonant Silicon Films

et al. 2016

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We experimentally verify a new class of coherent absorbers based on guidedmode resonance effects in periodic thin films. We design a silicon-based resonant absorber that is fabricated and tested near the 1300-nm wavelength. Implementing phase control, the device can, in principle, be switched between full absorption and full scattering. The first experimental prototype presented herein shows ∼78% absorption in the inphase state. Nearly total scattering is realized in the out-of-phase state. The experimental results agree reasonably well with theory.

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Progress in 2D photonic crystal Fano resonance photonics

Cited by 254 publications

References 237 publications

Thermal diffusion boron doping of single-crystal natural diamond

Thermal diffusion boron doping of single-crystal natural diamond

High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane

Experimental Evidence for Coherent Perfect Absorption in Guided-Mode Resonant Silicon Films

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