Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes

Fu, Wai Yuen; Choi, H. W.

doi:10.1063/5.0089750

Cited by 8 publications

(3 citation statements)

References 167 publications

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“…Because of such features, they are not universally applicable. For mechanical lift-off, even though this technique is universal, it remains difficult to manage precise crack propagation for spalling and thus the exfoliated film thickness . The most recent proposed layer transfer method, 2DLT, is free of the above issues.…”

Section: Discussionmentioning

confidence: 99%

Freestanding Membranes for Unique Functionality in Electronics

Han

Meng

et al. 2023

ACS Appl. Electron. Mater.

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Epitaxy of single-crystalline materials laid the foundation for numerous electronics as a core technology. Nevertheless, because the single-crystalline epilayers are covalently bonded to substrates, only limited applications were explored. The recent development of layer transfer techniques has suggested another way involving the production of freestanding membranes that are free from substrates. In this review, we comprehensively catalog recent advances for freestanding-membrane-based electronics from transistors and memory storage to sensors and energy harvesters. We highlight their unique advantages, including flexibility, unique physical coupling, heterointegrability, and costeffectiveness, and summarize their challenges and perspectives.

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Section: Discussionmentioning

confidence: 99%

Freestanding Membranes for Unique Functionality in Electronics

Han

Meng

et al. 2023

ACS Appl. Electron. Mater.

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“…However, CLO technology faces many challenges, such as chemical pollution and high cost, and spalling technology has many drawbacks and limitations owing to the hardness of the sapphire substrate and its wurtzite crystal lattice 88,89 . LLO technology, which environmentally heats the crystal and causes damage to achieve high throughput and yield without sacrificing the wafer area, has overcome many problems associated with standard separation techniques and is therefore the most promising technology for micro-LEDs 90 .…”

Section: Laser Lift-offmentioning

confidence: 99%

Applications of lasers: A promising route toward low-cost fabrication of high-efficiency full-color micro-LED displays

Lai,

Liu,

et al. 2023

OES

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Micro-light-emitting diodes (micro-LEDs) with outstanding performance are promising candidates for next-generation displays. To achieve the application of high-resolution displays such as meta-displays, virtual reality, and wearable electronics, the size of LEDs must be reduced to the micro-scale. Thus, traditional technology cannot meet the demand during the processing of micro-LEDs. Recently, lasers with short-duration pulses have attracted attention because of their unique advantages during micro-LED processing such as noncontact processing, adjustable energy and speed of the laser beam, no cutting force acting on the devices, high efficiency, and low cost. Herein, we review the techniques and principles of laser-based technologies for micro-LED displays, including chip dicing, geometry shaping, annealing, laserassisted bonding, laser lift-off, defect detection, laser repair, mass transfer, and optimization of quantum dot color conversion films. Moreover, the future prospects and challenges of laser-based techniques for micro-LED displays are discussed.

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“…The group III nitrides cover a wide range of band gaps (0.6-6.2 eV) [1,2]. These semiconductors are of great interest for the fabrication of optoelectronic devices [3], which may enable us to access light emission over a broad-spectrum region from infrared to ultraviolet [4,5]. Among them, GaN has been by far the most widely explored material in solid-state lighting applications [6].…”

Section: Introductionmentioning

confidence: 99%

Many-Body Calculations of Excitons in Two-Dimensional GaN

Zhang

2023

Crystals

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We present an ab initio study on quasiparticle (QP) excitations and excitonic effects in two-dimensional (2D) GaN based on density-functional theory and many-body perturbation theory. We calculate the QP band structure using GW approximation, which generates an indirect band gap of 4.83 eV (K→Γ) for 2D GaN, opening up 1.24 eV with respect to its bulk counterpart. It is shown that the success of plasmon-pole approximation in treating the 2D material benefits considerably from error cancellation. On the other hand, much better gaps, comparable to GW ones, could be obtained by correcting the Kohn–Sham gap with a derivative discontinuity of the exchange–correlation functional at much lower computational cost. To evaluate excitonic effects, we solve the Bethe–Salpeter equation (BSE) starting from Kohn–Sham eigenvalues with a scissors operator to open the single-particle gap. This approach yields an exciton binding energy of 1.23 eV in 2D GaN, which is in good agreement with the highly demanding GW-BSE results. The enhanced excitonic effects due to reduced dimensionality are discussed by comparing the optical spectra from BSE calculations with that by random-phase approximation (RPA) for both the monolayer and bulk GaN in wurtzite phase. Additionally, we find that the spin–orbit splitting of excitonic peaks is noticeable in 2D GaN but buried in the bulk crystal.

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Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes

Cited by 8 publications

References 167 publications

Freestanding Membranes for Unique Functionality in Electronics

Freestanding Membranes for Unique Functionality in Electronics

Applications of lasers: A promising route toward low-cost fabrication of high-efficiency full-color micro-LED displays

Many-Body Calculations of Excitons in Two-Dimensional GaN

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