Processing and properties of ytterbium-erbium silicate thin film gain media

Abstract

The structural and photoluminescence properties of ytterbium-erbium silicate thin films have been investigated. The films were fabricated by RFmagnetron co-sputtering of Er 2 O 3 , Yb 2 O 3 and SiO 2 on c-Si and subsequent annealing in N 2 or O 2 atmosphere.

Hybrid Si<inf>3</inf>N<inf>4</inf>-Er/Yb/Y silicate waveguide amplifier with 1.25dB/cm internal gain

“…Er silicates offer a number of advantages as emission hosts for Erbium doped waveguide amplifiers (EDWAs) over other materials because of their high Er density of ~10 22 cm -3 , large emission bandwidth, high photoluminescence efficiency, and proven, stable, low-noise operation at the 1.53μm region [1][2][3][4][5][6]. It is clear that Er silicates are the sought candidate material for compact waveguide amplifiers and emitters in silicon photonics [5].…”