2012
DOI: 10.1016/j.optmat.2012.02.001
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Composition dependence of the Yb-participated strong up-conversions in polycrystalline ErYb silicate

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Cited by 8 publications
(2 citation statements)
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“…Based on the density of states we obtain a band-gap of 5.0 eV for Er 2 SiO 5 and 5.2 eV for Er 2 Si 2 O 7 . This is in agreement with the experimental estimation of 4~5 eV for Er 2 SiO 5 [7]. For Er 2 SiO 5 , two Er atoms have a very similar DOS.…”
Section: Resultssupporting
confidence: 92%
“…Based on the density of states we obtain a band-gap of 5.0 eV for Er 2 SiO 5 and 5.2 eV for Er 2 Si 2 O 7 . This is in agreement with the experimental estimation of 4~5 eV for Er 2 SiO 5 [7]. For Er 2 SiO 5 , two Er atoms have a very similar DOS.…”
Section: Resultssupporting
confidence: 92%
“…The photoluminescence phenomena of ultraviolet light by lanthanide doped materials has attracted much more attention in the present days due to their potential applications, such as lightemitting devices, optoelectronics, medical diagnostics and sensor [7][8][9][10][11][12]. Erbium oxide has been intensively investigated for different technological purposes, such as color display, data storage, biological diagnosis, infrared detection, and temperature sensor [13][14][15][16]. It also plays an important role in a preparation of novel light -emitting materials [17][18].…”
Section: Introductionmentioning
confidence: 99%