Processing and characterization of yttrium-stabilized zirconia thin films on polyimide from aqueous polymeric precursors

Gorman, Brian P.; Anderson, Harlan U.

doi:10.1016/j.tsf.2003.10.034

Cited by 5 publications

(3 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4. The energy band gap of YSZ is 5.9 eV [13]. The Schottky barrier height for YSZ/Si is 1.4 eV [14].…”

Section: Methodsmentioning

confidence: 99%

High-κ Insulator Thin Films and Retention Properties of MFIS Diodes

Zhou

2011

MRS Proc.

View full text Add to dashboard Cite

Ferroelectric field effect transistor (FFET) is a promising candidate for non-volatile random access memory because of its high speed, single device structure, low power consumption, and nondestructive read-out operation. Currently, however, such ideal devices are commercially not available due to poor interface properties between ferroelectric film and Si substrate, such as leakage current and interdiffusion etc. So we choose YSZ and HfO 2 insulating thin films as buffer layer due to they possess relatively high dielectric constant, high thermal stability, low leakage current, and good interface property with Si substrates. Two structural diodes of Pt/BNT/YSZ/Si and Pt/SBT/HfO 2 /Si were fabricated, and the microstructures, interface properties, C-V, I-V, and retention properties were investigated in detail. Experimental results show that the fabricated diodes exhibit excellent long-term retention properties, which is due to the good interface and the low leakage density, demonstrating that the YSZ and HfO 2 buffer layers are playing a critical modulation role between the ferroelectric thin film and Si substrate.

show abstract

“…4. The energy band gap of YSZ is 5.9 eV [13]. The Schottky barrier height for YSZ/Si is 1.4 eV [14].…”

Section: Methodsmentioning

confidence: 99%

High-κ Insulator Thin Films and Retention Properties of MFIS Diodes

Zhou

2011

MRS Proc.

View full text Add to dashboard Cite

show abstract

“…In this article, we report on the fabrication of thick, clearly defined metal oxide microstructures strongly adhered to a flexible polymer substrate, that is, polyimide (PI), through a modified MTP. PI has been utilized mainly as a substrate for printed circuit boards due to its high heat resistance, mechanical strength, and insulating properties. , We selected tin oxide (SnO x ) as a model metal oxide, since it has been widely used as a gas-sensing material for sensor array systems and as a transparent conducting film for solar cells. − Prior to forming a SAM on the PI substrates, we fabricated a silicon dioxide (SiO 2 ) layer of molecular-scale thickness, i.e., an “oxide nanoskin” (ONS) . ONS-covered polymer surfaces have been reported to be almost identical to that of a Si substrate covered with native oxide (SiO 2 /Si) .…”

Section: Introductionmentioning

confidence: 99%

Etchingless Microfabrication of a Thick Metal Oxide Film on a Flexible Polymer Substrate

Shirahata

Hozumi

2004

Chem. Mater.

View full text Add to dashboard Cite

Well-defined microstructures of metal oxide, i.e., tin oxide (SnO x ), were formed on a flexible polymer substrate from an aqueous solution of tin chloride without the use of any chemical or physical etching. First, through the chemical vapor deposition of tetraethoxysilane and subsequent photooxidation using 172 nm vacuum-ultraviolet (vacuum-UV) light, an extremely thin SiO 2 layer about 1 nm thick, which we call an "oxide nanoskin" (ONS), was formed on a polyimide (PI) substrate. Next, (heptadecafluoro-1,1,2,2-tetrahydrodecyl)trimethoxysilane (FAS) molecules were chemisorbed onto this ONS-covered PI (ONS/PI) surface from the vapor phase. As a control, a hydrophilized PI substrate was also treated under the same conditions. Both substrates were then photolithographically micropatterned using the same vacuum-UV light. Finally, the fabricated micropatterns composed of hydrophobic FAS-and hydrophilic SiOH-covered regions served respectively as chemically inert and active sites to provide a template for the area-selective deposition of SnO x film. Although the SnO x film was initially deposited on the entire substrate, the physisorbed film on the FAS-covered regions was easily eliminated from the surface by sonication in absolute toluene, while that on the SiOH-covered regions remained tightly adhered to the substrate surface. As confirmed by atomic force microscopy, square-shaped SnO x micropatterns composed of 25 × 25 µm 2 features were formed on the micropatterned FAS/ONS/PI substrates. However, on the substrate without the ONS layer, pattern resolution became significantly worse and elimination of the physisorbed SnO x on the FAS-covered regions was incomplete. The ONS interlayer was effective both in forming a highly ordered FAS monolayer on the PI substrate and in obtaining excellent adhesion of the SnO x film to the PI substrate. Furthermore, our process enabled us to control the thickness of the SnO x microstructures within the range of a few hundreds nanometers to over 1 µm without distortion of their fine patterns. The SnO x microstructures we obtained on the PI substrates were free of cracks or peeling even after thermal treatment and showed excellent mechanical properties.

show abstract

“…3͑a͒. 20 The Schottky barrier height for YSZ/Si is 1.4 eV. Figure 3͑b͒ displays the longterm retention properties of Pt/BNT/YSZ/Si diode.…”

mentioning

confidence: 99%

The electrical and switching properties of a metal-ferroelectric (Bi3.15Nd0.85Ti3O12)-insulator (Y2O3-stabilized ZrO2)-silicon diode

Zhang

Zhong

Wang

et al. 2010

Applied Physics Letters

View full text Add to dashboard Cite

Articles you may be interested inElectrical properties of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -polysilicon-insulator ( Y 2 O 3 ) -silicon capacitors and field-effect transistorsa) Electrical characteristics of metal-ferroelectric ( Bi Fe O 3 ) -insulator ( Y 2 O 3 ) -semiconductor capacitors and field-effect transistors Characterization of metal-ferroelectric ( Bi Fe O 3 ) -insulator ( Zr O 2 ) -silicon capacitors for nonvolatile memory applications Appl. Phys. Lett. 91, 142103 (2007); 10.1063/1.2794335 Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric-insulator-semiconductor diodes Appl. Phys. Lett. 90, 162902 (2007); 10.1063/1.2723678Low-voltage operation of metal-ferroelectric-insulator-semiconductor diodes incorporating a ferroelectric polyvinylidene fluoride copolymer Langmuir-Blodgett film

show abstract

Processing and characterization of yttrium-stabilized zirconia thin films on polyimide from aqueous polymeric precursors

Cited by 5 publications

References 18 publications

High-κ Insulator Thin Films and Retention Properties of MFIS Diodes

High-κ Insulator Thin Films and Retention Properties of MFIS Diodes

Etchingless Microfabrication of a Thick Metal Oxide Film on a Flexible Polymer Substrate

The electrical and switching properties of a metal-ferroelectric (Bi3.15Nd0.85Ti3O12)-insulator (Y2O3-stabilized ZrO2)-silicon diode

Contact Info

Product

Resources

About