Process solutions and polymer materials for 3D-WLP through silicon via filling

Bouchoucha, Mohamed Khalil; Chausse, P.; Henry, David D.; Sillon, N.

doi:10.1109/ectc.2010.5490748

Cited by 18 publications

(16 citation statements)

References 8 publications

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“…To alleviate thermal stresses, polymers have been proposed as the insulators (liners) for electrical isolation of Cu from the wafer and simultaneously as a stress buffer layer [37]- [42]. The elastic moduli of polymers are normally on the order of several GPa at room temperature, ∼10% of commonly used SiO 2 -liner 70 GPa, and thus are effective in reducing thermal stresses due to the relatively large deformation while experiencing thermal stress [43]- [50].…”

Section: -D Integration Is Emerging As a Promising Technologymentioning

confidence: 99%

“…So far, TSVs with polymer liners, including BCB, have been developed using different fabrication methods [37]- [42], but the thermal-dependent properties of BCB-liner TSVs are not intensively characterized. Although the glass transition temperature of BCB is as high as 350°C after hard-curing [51], its thermal stability is still inferior to SiO 2 due to the features inherent organic material.…”

Section: -D Integration Is Emerging As a Promising Technologymentioning

confidence: 99%

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Thermal and Electrical Properties of BCB-Liner Through-Silicon Vias

Huang

Pan

Liu

et al. 2014

IEEE Trans. Compon., Packag. Manufact. Technol.

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Through-silicon vias (TSVs) using benzocyclobutene (BCB)-liners as the insulator have the potential for reducing the TSV capacitances and the thermal expansion stresses. This paper reports the assessments of BCB-liner TSVs with respect to thermal and electrical properties. The C-V and I-V characteristics are measured at room temperature and at an elevated temperature as high as 125°C to characterize the electrical properties of capacitance and leakage current at different temperatures. Some C-V and I-V features associated with BCB-liners are discussed and the mechanisms are analyzed. Thermal cycling between −65°C and 150°C is performed, and the C-V and I-V characteristics are measured before and after thermal cycling to evaluate the thermomechanical stability of the BCB-liners, and the results show that the C-V and I-V properties are improved after thermal cycling. These preliminary results on the electrical and thermal properties of BCB-liner TSVs show that they have good thermal stability.

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Section: -D Integration Is Emerging As a Promising Technologymentioning

confidence: 99%

Section: -D Integration Is Emerging As a Promising Technologymentioning

confidence: 99%

Thermal and Electrical Properties of BCB-Liner Through-Silicon Vias

Huang

Pan

Liu

et al. 2014

IEEE Trans. Compon., Packag. Manufact. Technol.

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“…polymers, followed by appropriate thermal processing and removal of excess material from the surface. Extensive work has been done in the development of each of these processes, and the characterization of the resulting TSV's at a variety of dimensions and pitches [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43].…”

Section: Tsv Processesmentioning

confidence: 99%

“…Copper has a high CTE (coefficient of thermal expansion) mismatch with silicon, leading to real concerns about stress induced by the TSV in the surrounding silicon matrix during thermal excursions. For this reason, some researchers have proposed only a partial filling with copper, followed by a complete filling with a polymer of appropriate physical characteristics [41]. Volant et al [45] have proposed an annular co-axial TSV that contains a suitable polyimide, to over the thermo-mechanical reliability problem.…”

Section: Tsv Processesmentioning

confidence: 99%

3D integration review

Farooq¹,

Iyer²

2011

Sci. China Inf. Sci.

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3-D integration delivers value by increasing the volumetric transistor density with the potential benefit of shorter electrical path lengths through use of the shorter third dimension. Several researchers have studied various aspect of 3Di such as bonding level, through silicon via processes and integration, thermomechanical reliability of the vias, and the impact of the vias on devices. In this paper, we review some of the literature with a view to understanding the key options and challenges in 3Di. We also discuss some important applications of this technology, and the constraints that have to be overcome to make it work.

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“…This phenomenon can be amplified by pop-up effect. TSV filling material and process are thus mandatory to obtain a more reliable and 3D stacking compatible structure [3].…”

Section: Introductionmentioning

confidence: 99%

Reliability study of 3D-WLP through silicon via with innovative polymer filling integration

Bouchoucha

Chausse

Moreau

et al. 2011

2011 IEEE 61st Electronic Components and Technology Conference (ECTC)

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This paper deals with an innovative via-last TSV polymer filling process dedicated to straight (non-slopped), high aspect ratio (2:1 to 5:1) TSV, partially filled with copper. New polymers were investigated for this purpose.Firstly, the need for a polymer filling process is pointed out. Potential reliability issues added by this new process are developed through finite element modelling. Secondly, the filling process and the optimization phase in order to obtain a void free polymer inside the TSV are presented. A complete integration of polymer filling on electrical test vehicle is then performed. Finally, the impact of polymer filling on the TSV electrical performances is presented. Electrical tests are performed on chains of 10 and 100 TSV in order to check critical parameters such as electrical resistance. A reliability study of TSV polymer filling through JEDEC standard harsh temperature cycling is presented. First results of a comparison of the stack behaviour between a standard RDL polymer insulation and our innovative TSV polymer filling process is performed by means of morphological and electrical characterizations of the TSV before and after cycling.

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Process solutions and polymer materials for 3D-WLP through silicon via filling

Cited by 18 publications

References 8 publications

Thermal and Electrical Properties of BCB-Liner Through-Silicon Vias

Thermal and Electrical Properties of BCB-Liner Through-Silicon Vias

3D integration review

Reliability study of 3D-WLP through silicon via with innovative polymer filling integration

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