Process characterization of thin wafer debonding with thermoplastic materials

Phommahaxay, Alain; Jourdain, Anne; Verbinnen, Greet; Woitke, Tobias; Stieber, Ralf; Bisson, Peter; Gabriel, Manal M.; Spieß, W.; Guerrero, Alice; McCutcheon, Jeremy; Puligadda, Rama; Bex, Pieter; Eede, Axel Van den; Swinnen, Bart; Beyer, Gerald; Miller, Andy; Beyne, Eric

doi:10.1109/estc.2012.6542176

Cited by 11 publications

(5 citation statements)

References 2 publications

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“…Such method usually involve perforated carrier in order to obtain acceptable process time.  Mechanical sliding of the wafer after melt of a thermoplastic material [4].  Laser release methods by degrading the adhesive layer itself or by employing light sensitive release layers [5].…”

Section: Common Thin Wafer Debonding Methodsmentioning

confidence: 99%

Demonstration of a novel low cost single material temporary bond solution for high topography substrates based on a mechanical wafer debonding and innovative adhesive removal

Phommahaxay

Nakamura²,

Jourdain

et al. 2015

2015 IEEE 65th Electronic Components and Technology Conference (ECTC)

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Among the technological developments pushed by the emergence of 3D-ICs, wafer thinning has become a key element in device processing over the past years. As technology matures, more emphasis is now being put on the overall cost of ownership, which is still regarded as a refraining element for technology adoption. Therefore novel temporary bond concepts and materials are being explored to further bring down the process complexity and cost.

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Section: Common Thin Wafer Debonding Methodsmentioning

confidence: 99%

Demonstration of a novel low cost single material temporary bond solution for high topography substrates based on a mechanical wafer debonding and innovative adhesive removal

Phommahaxay

Nakamura²,

Jourdain

et al. 2015

2015 IEEE 65th Electronic Components and Technology Conference (ECTC)

Self Cite

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“…After that, a back side passivation layer consisting of 500 nm low-temperature SiN was added and the Cu in TSVs was exposed and the RDL was added. 24) Finally, Cu or Cu=Sn bumps were added on the basis of a semi-additive process to the top or bottom wafers, respectively. All relevant process conditions are listed in Table I.…”

Section: Methodsmentioning

confidence: 99%

Effect of test structure on electromigration characteristics in three-dimensional through silicon via stacked devices

Oba¹,

Messemaeker

Tyrovouzi

et al. 2015

Jpn. J. Appl. Phys.

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Electromigration failure locations in three-dimensional (3D) interconnect structures with high-aspect-ratio through silicon vias, (TSVs, Φ5 × 50 µm2) connected to 40-µm-pitch CuSn solder joints have been identified using test structures which were designed to avoid failures in the back-end-of-line (BEOL). The resistance of the structures with the TSV and bump connections showed a continuous increase until failure. For the structures without a bump connection, where only TSV and re-distributed line (RDL) were the electrically connected, the resistance remained constant prior to the final failure. From cross-sectional analyses after the test, the failure locations were identified at the TSV bottom or at the bump bottom. The location of void formation was changed by applied current direction. The flux divergence generated by the barrier metal and the reservoir effect plays a crucial role in the void formation, and each failure mode is considered to have a different impact on the reliability performance.

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“…Automated detachers can help in the process by avoiding mechanical bending of the 2D material layer/film, which minimizes consequent crack propagation and also improves peeling yields. IMEC, in its 300 mm via-middle approach, also reported the progress of temporary bonding solutions, starting from first-generation thin substrate demonstrations. − Phommahaxay et al has demonstrated a few instances of laser-induced automated debonding with low forces. , Over the past few years, development in robotic-arm tools has resulted in several impressive self-consistent transfer modules. , Most recently, exemplary work by Mannix et al has established that the future of 2D transfer technology lies in automated/robotic systems . The main barrier to developing a highly compatible 2D transfer strategy is the FEOL and BEOL compatibility.…”

Section: D Transfer Modulesmentioning

confidence: 99%

A Researcher’s Perspective on Unconventional Lab-to-Fab for 2D Semiconductor Devices

et al. 2023

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Current silicon technology is on the verge of reaching its performance limits. This aspect, coupled with the global chip shortage, makes a solid case for steering our attention toward the accelerated commercialization of other electronic materials. Among the available suite of emerging electronic materials, two-dimensional materials, including transition metal dichalcogenides (TMDs), exhibit improved short-channel effects, high electron mobility, and integration into CMOS-compatible processing. While these materials may not be able to replace silicon at the current stages of development, they can supplement Si in the form of Sicompatible CMOS processing and be manufactured for tailored applications. However, the major hurdle in the path of commercialization of such materials is the difficulty in producing their wafer-scale forms, which are not necessarily single crystalline but on a large scale. Recent but exploratory interest in 2D materials from industries, such as TSMC, necessitates an in-depth analysis of their commercialization potential based on trends and progress in entrenched electronic materials (Si) and ones with a short-term commercialization potential (GaN, GaAs). We also explore the possibility of unconventional fabrication techniques, such as printing, for 2D materials becoming more mainstream and being adopted by industries in the future. In this Perspective, we discuss aspects to optimize cost, time, thermal budget, and a general pathway for 2D materials to achieve similar milestones, with an emphasis on TMDs. Beyond synthesis, we propose a lab-to-fab workflow based on recent advances that can operate on a low budget with a mainstream full-scale Si fabrication unit.

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Process characterization of thin wafer debonding with thermoplastic materials

Cited by 11 publications

References 2 publications

Demonstration of a novel low cost single material temporary bond solution for high topography substrates based on a mechanical wafer debonding and innovative adhesive removal

Demonstration of a novel low cost single material temporary bond solution for high topography substrates based on a mechanical wafer debonding and innovative adhesive removal

Effect of test structure on electromigration characteristics in three-dimensional through silicon via stacked devices

A Researcher’s Perspective on Unconventional Lab-to-Fab for 2D Semiconductor Devices

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