Probing Charge Transfer at Surfaces Using Graphene Transistors

Lévesque, Pierre L.; Sabri, Shadi; Aguirre, Carla; Guillemette, Jonathan; Siaj, Mohamed; Desjardins, P.; Szkopek, Thomas; Martel, Richard

doi:10.1021/nl103015w

Cited by 296 publications

(336 citation statements)

References 26 publications

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“…19 More recently, Levesque et al identified the water/oxygen redox couple as the underlying mechanism responsible for charge doping in graphene-SiO 2 and graphene-parylene FETs. 20 However, in the latter work, the choice of the geometry of the sample was chosen in order to preclude strong bonding from playing an important role in the measurement so as to isolate the effect of gas interaction. This is fundamentally different from the epitaxial graphene case, where the interaction with the substrate is not only inevitable, but plays an integral part in the determination of the properties of the active layer.…”

Section: à2mentioning

confidence: 99%

Charge transfer equilibria in ambient-exposed epitaxial graphene on (0001¯) 6 H-SiC

Sidorov

Gaskill

Nardelli

et al. 2012

Journal of Applied Physics

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The transport properties of electronic materials have been long interpreted independently from both the underlying bulk-like behavior of the substrate or the influence of ambient gases. This is no longer the case for ultra-thin graphene whose properties are dominated by the interfaces between the active material and its surroundings. Here, we show that the graphene interactions with its environments are critical for the electrostatic and electrochemical equilibrium of the active device layers and their transport properties. Based on the prototypical case of epitaxial graphene on (000 1) 6 H-SiC and using a combination of in-situ thermoelectric power and resistance measurements and simulations from first principles, we demonstrate that the cooperative occurrence of an electrochemically mediated charge transfer from the graphene to air, combined with the peculiar electronic structure of the graphene/SiC interface, explains the wide variation of measured conductivity and charge carrier type found in prior reports. V C 2012 American Institute of Physics. [http://dx

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Section: à2mentioning

confidence: 99%

Charge transfer equilibria in ambient-exposed epitaxial graphene on (0001¯) 6 H-SiC

Sidorov

Gaskill

Nardelli

et al. 2012

Journal of Applied Physics

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“…[12][13][14] Second, it has been shown that impurities on graphene that contain states near the Dirac point can be charged and discharged as the graphene Fermi level is varied via the applied gate bias. 15,16 This charging and discharging process cause the background doping to have a gate dependence (as impurities are turned 'on' and 'off') , and thus alter the expected gate voltage vs. carrier density dependence.…”

Section: Determination Of Carrier Density Of Graphene Sheetmentioning

confidence: 99%

Hybrid Surface-Phonon-Plasmon Polariton Modes in Graphene/Monolayer h-BN Heterostructures

Brar¹,

Jang

Sherrott³

et al. 2014

Nano Lett.

321

282

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Infrared transmission measurements reveal the hybridization of graphene plasmons and the phonons in a monolayer hexagonal boron nitride (h-BN) sheet. Frequencywavevector dispersion relations of the electromagnetically coupled graphene plasmon/h-BN phonon modes are derived from measurement of nanoresonators with widths varying from 30 to 300 nm. It is shown that the graphene plasmon mode is split into two distinct optical modes that display an anticrossing behavior near the energy of the h-BN optical phonon at 1370 cm −1 . We explain this behavior as a classical electromagnetic strong-coupling with the highly confined near fields of the graphene plasmons allowing for hybridization with the phonons of the atomically thin h-BN layer to create two clearly separated new surface-phonon-plasmon-polariton (SPPP) modes.

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“…[ 31] In the conditions used here, this unintentional doping induces a blue shift by~10 cm À1 for the monolayer relative to islands of bilayers and multilayers (i.e. the monolayer is p doped).…”

Section: Examples Of Structural Analysis Of Nanomaterialsmentioning

confidence: 99%

Hyperspectral Raman imaging using Bragg tunable filters of graphene and other low‐dimensional materials

Gaufrès

Marcet

Aymong

et al. 2017

J Raman Spectroscopy

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imaging is presented as a powerful method to acquire quantitative as well as qualitative information on lowdimensional materials. The method is, however, not widely used due to limitations of the Raman scanning instruments. Here we present a hyperspectral Raman system based on Bragg tunable filtering that is capable of global imaging with significantly reduced acquisition time and improved sensitivity compared to scanning confocal Raman microscopes. The operation principles of the instrument are presented, and the performance is benchmarked using a calibrated carbon nanotube sample. Examples of various applications are shown to illustrate the abilities of the technique to characterize samples deposited on oxidized silicon substrates, including graphene stacks prepared by chemical-vapor deposition, exfoliated MoS 2 , and carbon nanotubes filled with dye molecules. The wealth of information available through this hyperspectral Raman imaging technique opens many new ways to probe the properties of complex low-dimensional materials.

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Probing Charge Transfer at Surfaces Using Graphene Transistors

Cited by 296 publications

References 26 publications

Charge transfer equilibria in ambient-exposed epitaxial graphene on (0001¯) 6 H-SiC

Charge transfer equilibria in ambient-exposed epitaxial graphene on (0001¯) 6 H-SiC

Hybrid Surface-Phonon-Plasmon Polariton Modes in Graphene/Monolayer h-BN Heterostructures

Hyperspectral Raman imaging using Bragg tunable filters of graphene and other low‐dimensional materials

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