Hybrid Surface-Phonon-Plasmon Polariton Modes in Graphene/Monolayer h-BN Heterostructures

Abstract

Infrared transmission measurements reveal the hybridization of graphene plasmons and the phonons in a monolayer hexagonal boron nitride (h-BN) sheet. Frequencywavevector dispersion relations of the electromagnetically coupled graphene plasmon/h-BN phonon modes are derived from measurement of nanoresonators with widths varying from 30 to 300 nm. It is shown that the graphene plasmon mode is split into two distinct optical modes that display an anticrossing behavior near the energy of the h-BN optical phonon at 1370 cm −1 . We explain this behavior as a classical electromagnetic strong-coupling with the highly confined near fields of the graphene plasmons allowing for hybridization with the phonons of the atomically thin h-BN layer to create two clearly separated new surface-phonon-plasmon-polariton (SPPP) modes.

Electronic modulation of infrared radiation in graphene plasmonic resonators

“…4b). In addition to direct emission from the SiN x phonon, the graphene plasmons can couple to the SiN x phonons to create new surface phonon plasmon polariton modes 21,22,25,38 . The formation of these modes leads to a modification of the plasmonic dispersion relation, and additional absorption (emission) pathways near and below the energy of the SiN x phonon (see Supplementary Note 3, Supplementary Fig.…”

“…In addition, the linear bandstructure and two-dimensional nature of graphene allow for it to support plasmonic modes that have a unique dispersion relation [14][15][16][17] . These plasmonic modes have been proposed as a means of efficiently coupling to THz radiation [18][19][20] , and they have been shown to create strong absorption pathways in the THz to mid-IR when the graphene is patterned to form plasmonic Fabry-Perot resonances [21][22][23][24] . The intensity and frequency of the plasmonic modes in graphene are carrier density dependent, and they display extermely large mode confinement, which allows them to efficiently couple to excitations (for example, phonons) in their environment and to create new optical modes 21,22,25,26 .…”

“…These plasmonic modes have been proposed as a means of efficiently coupling to THz radiation [18][19][20] , and they have been shown to create strong absorption pathways in the THz to mid-IR when the graphene is patterned to form plasmonic Fabry-Perot resonances [21][22][23][24] . The intensity and frequency of the plasmonic modes in graphene are carrier density dependent, and they display extermely large mode confinement, which allows them to efficiently couple to excitations (for example, phonons) in their environment and to create new optical modes 21,22,25,26 . As the graphene sheet is heated up, these different infrared absorption pathways become thermal emission sources, with contributions that vary with the graphene carrier density and surface geometry.…”

Ultrafast, Broadband Photodetector Based on MoSe2/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode

“…2D materials such as graphene, hexagonal boron nitride (h‐BN), VS 2 , Bi 2 S 3 , and GaSe have been widely studied, because of their great potential in the field of catalysis, microelectronics, ion storage, and optoelectronics 1, 2, 3, 4, 5, 6, 7, 8, 9, 10. As one of the most significant members of 2D materials family, transition metal dichalcogenides (TMDs), such as MoS 2 , MoSe 2 , WS 2 , and WSe 2 , have attracted tremendous attention currently due to their outstanding electronic, optical, and mechanical properties 11, 12, 13, 14, 15, 16, 17, 18, 19.…”

Anomalous reflection phase of graphene plasmons and its influence on resonators

“…In particular, resonant plasmonic effects have been measured in arrays of ribbons in an ample range of ribbons widths [18,[20][21][22][23][24]. Often, as is evident in these works, the analysis of the resonant absorption peaks has been based on the comparison with the dispersion relation of two-dimensional (2D) GPs via the relation k p = π/W , where W is the "active" part of the graphene ribbon (i.e., the region having a sufficiently high concentration of charge carriers).…”