Ultrafast, Broadband Photodetector Based on MoSe<sub>2</sub>/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode

Mei, Jie; Yu, Yongqiang; Wang, Liu; Zhang, Xiujuan; Wang, Yuming; Shao, Zhibin; Jie, Jiansheng

doi:10.1002/advs.201600018

Cited by 234 publications

(167 citation statements)

References 69 publications

(56 reference statements)

Supporting

Mentioning

155

Contrasting

Unclassified

Order By: Relevance

“…The photodetector exhibited an ultrahigh detectivity of approximately 10 14 Jones, small rise/fall times of 9/7 μs, and a maximum responsivity of 9 A W −1 in the range from 550 to 850 nm. In addition, a vertically standing layered MoSe 2 /p‐Si heterojunction‐based photodetector was also developed using graphene as the top electrode material . The resulting graphene/MoSe 2 /p‐Si heterojunction‐based photodetector exhibited a responsivity of 270 mA W −1 , with rise/fall times of 0.27/0.35 μs and a detectivity of 7.13 × 10 10 Jones.…”

Section: D Thin Film/si Heterostructurementioning

confidence: 99%

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

Tian

Sun

Chen

et al. 2019

InfoMat

View full text Add to dashboard Cite

Due to its excellent electrical and optical features, silicon (Si) is highly attractive for photodetector applications. The design and fabrication of low‐dimensional semiconductor/Si hybrid heterostructures provide a great platform for fabricating high‐performance photodetectors, thereby overcoming the inherent limitations of Si. This review focuses on state‐of‐the‐art Si heterostructure‐based photodetectors. It starts with the introduction of three different device configurations, that is, photoconductors, photodiodes, and phototransistors. Their working mechanisms and relative pros and cons are introduced, and the figures of merit of photodetectors are summarized. Then, we discuss the device physics/design, photodetection performance, and optimization strategies for Si‐based photodetectors. Finally, future challenges in the photodetector applications of Si‐based hybrid heterostructures are discussed.

show abstract

Section: D Thin Film/si Heterostructurementioning

confidence: 99%

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

Tian

Sun

Chen

et al. 2019

InfoMat

View full text Add to dashboard Cite

show abstract

“…Junction interface modification should be carried out, especially for the 3D nanostructures with large surface-to-volume ratio, to reduce the interface carrier recombination and meanwhile tune the junction barrier height. Surface passivation with thin interface oxide layer [4][5][6] and the use of methylated Si [12][13][14] showed the capability to effectively suppress the carrier recombination, leading to a remarkable improvement of device performance. Furthermore, an electron blocking layer like poly (3-hexylthiophene) (P3HT) was inserted at graphene/Si heterojunction interface to further suppress the carrier recombination and improve effective junction height [12][13][14].…”

mentioning

confidence: 99%

“…In addition to the adoption of thick 2D materials [4][5][6], construction of 3D nanostructure arrays offers the advantages of enhanced light absorption and improved device performance. Luo et al [8] demonstrated the NIR photodetector based on MLG/GaAs nanocone arrays Schottky junction.…”

mentioning

confidence: 99%

“…As a result, the self-driven device displayed excellent performance with high detectivity (~10 13 Jones) and fast response speed (~3 µs). To further accelerate the response speed, high-quality MoSe 2 /Si heterojunction with vertically standing layered structure was constructed by Mao et al [5], and graphene was used as transparent electrode to enhance the carrier collection and conse-quently reduce the recombination at junction interface. The strong built-in electric field and short transmit time guaranteed the graphene/MoSe 2 /Si photodetectors to exhibit ultrafast response speed of~270 ns.…”

mentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Hybrid heterojunctions based on 2D materials and 3D thin-films for high-performance photodetectors

Fang

2016

Sci. China Phys. Mech. Astron.

View full text Add to dashboard Cite

Photodetectors, converting optical signals to electrical signals, play a significant role in our daily life. Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides (TMDs), have displayed excellent mechanical, optical, electric, thermal properties and have been proved to be appealing building blocks for optoelectronic applications. However, for the 2D material-based photodetectors, their responsivity, response speed, and detectivity, which are key figures of merit for photodetectors, are still far from satisfying and restrict practical applications due to lack of highquality heterojunctions and poor light absorption of atom-thin 2D materials. In contrast, three-dimensional (3D) semiconductor materials, typically referring to thin films, have strong light absorption and tunable electronic properties. The implementation of hybrid systems to form high-quality 2D/3D hybrid heterojunctions is thus considered as a simple and feasible approach to harness both the advantages of 2D and 3D materials. Up to now, significant effort has been devoted to construct different 2D/3D hybrid heterojunctions and the progress paves the way toward high-performance photodetectors.Silicon (Si), the typical and mature thin film semiconductor, counts a perfect platform to combine with 2D materials. Constructing high-quality 2D/Si hybrid heterojunctions can not only facilitate the separation and transportation of photo-induced carriers, but also compensate the limited spectral bandwidth of Si (especially for infrared applications) owing to the *Corresponding author (email: wdhu@mail.sitp.ac.cn) wide absorption spectra of different 2D materials. Graphene, which possesses unique Dirac cone band structure with high carrier mobility (~10 5 cm 2 /V·s), could act as both transparent conductive electrode and active layer to form junction with crystalline Si [1]. The monolayer graphene (MLG)/Si heterojunction formed by simple solution transfer method could operate without external bias voltage and displayed a fast response speed of~100 µs due to the strong built-in electric field. In addition, the device with a large specific detectivity (D * ) of~10 13 Jones showed pronounced sensitivity for weak near-infrared (NIR) light detection. Besides Si, other traditional semiconductors like germanium (Ge) [2] and GaAs [3] also exhibited great potential to integrate with atomically thin 2D materials for high-performance photodetectors.Apart from semimetallic graphene, TMDs with tunable energy spectrum enable the wide range light-matter interaction and can be utilized as optical materials. Wang et al. [4] deposited MoS 2 films on Si substrate with a scalable sputtering method to construct high-quality MoS 2 /Si p-n heterojunction. Significantly, the MoS 2 films possessed a unique vertically standing layered structure. The atomic layers were perpendicular to the substrate, which was conducive to transportation of photo-generated carriers. As a result, the self-driven device displayed excellent performance with high detectivi...

show abstract

Fast, Self‐Driven, Air‐Stable, and Broadband Photodetector Based on Vertically Aligned PtSe₂/GaAs Heterojunction

Zeng

Lin

et al. 2018

Adv Funct Materials

355

187

View full text Add to dashboard Cite

Group-10 layered transitional metal dichalcogenides including PtS2, PtSe2 and PtTe2 are excellent potential candidates for optoelectronic devices due to their unique properties such as high carrier mobility, tunable bandgap, stability and flexibility. Large-area platinum diselenide (PtSe2) with semiconducting characteristics is far scarcely investigated. Here, we report on the development of a high performance photodetector based on vertically aligned PtSe2-GaAs heterojunction which exhibited a broadband sensitivity from deep ultraviolet (DUV) to near infrared (NIR) light, with peak sensitivity from 650 to 810 nm. The Ilight/Idark ratio and responsivity of photodetector were 3×10 4 and 262 mA W −1 measured at 808 nm under zero bias voltage. The response speed of τr/τf were 5.5/6.5 μs, which represented the best result achieved for Group-10 TMDs based optoelectronic device thus far. According to first-principle density functional theory, the broad photoresponse ranging from visible to near infrared region is associated with the semiconducting characteristics of PtSe2 which has interstitial Se atoms within the PtSe2 layers. It was also revealed that the PtSe2/GaAs photodetector did not exhibit performance degradation after 6 weeks in air. The generality of the above good results suggests that the vertically aligned PtSe2 is an ideal material for high-performance optoelectronic systems in the future.

show abstract

Ultrafast, Broadband Photodetector Based on MoSe₂/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode

Cited by 234 publications

References 69 publications

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

Hybrid heterojunctions based on 2D materials and 3D thin-films for high-performance photodetectors

Fast, Self‐Driven, Air‐Stable, and Broadband Photodetector Based on Vertically Aligned PtSe₂/GaAs Heterojunction

Contact Info

Product

Resources

About

Ultrafast, Broadband Photodetector Based on MoSe2/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode

Cited by 234 publications

References 69 publications

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

Hybrid heterojunctions based on 2D materials and 3D thin-films for high-performance photodetectors

Fast, Self‐Driven, Air‐Stable, and Broadband Photodetector Based on Vertically Aligned PtSe2/GaAs Heterojunction

Contact Info

Product

Resources

About

Ultrafast, Broadband Photodetector Based on MoSe₂/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode

Fast, Self‐Driven, Air‐Stable, and Broadband Photodetector Based on Vertically Aligned PtSe₂/GaAs Heterojunction