Principles of Fluorine Distribution in Chemical Vapor Deposited Tungsten Films

Eriksson, Th.; Östling, Mikael; Mogyorósi, P.; Carlsson, Jan‐Otto; Keinonen, J.

doi:10.1149/1.2069065

Cited by 4 publications

(1 citation statement)

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“…Following the calibration of sample surface temperature, the activation energy of sidewall etching was determined to be 94 kJ mol À1 , as shown in Fig. 11, comparable to reported results for tungsten fluoride dissociation 31) or associative desorption. 18) In the vertical direction, the SF 6 : N 2 process has two distinct, temperature-dependent etch rates, implying that etching shifts from a chemically controlled process to a physical controlled process with decreasing temperature.…”

Section: Resultssupporting

confidence: 81%

Optical Emission Spectrometry of Plasma in Low-Damage Sub-100 nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors

Li¹,

Zhou²,

Wilkinson³

et al. 2006

Jpn. J. Appl. Phys.

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In this study, we investigate in situ optical emission spectra from plasma in the reactive ion etching (RIE) of tungsten, a suitable candidate for gate metallization in compound-semiconductor-based high-mobility channel devices. This results in a detailed understanding of the effects of etching parameters vital to reducing etch induced damage and improving etching performance. A SF6 based chemistry was used with other functional gases, such as N2, O2, and CHF3. Van de Pauw (VdP) structures on GaAs based high electron mobility transistor (HEMT) layer structures were used for evaluating plasma-induced damage in the RIE process. The optimised process results in a maximum increase of 15% in the sheet resistance of the semiconductor material. Etched tungsten line widths down to 25 nm with well controlled profile were obtained by adjusting the etching conditions based on the understanding of the etching mechanism.

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Section: Resultssupporting

confidence: 81%