Development of PECVD WNx ultrathin film as barrier layer for copper metallization

Ecke, Ramona; Schulz, Stefan E.; Hecker, M.; Geßner, Thomas

doi:10.1016/s0167-9317(02)00798-0

Cited by 25 publications

(13 citation statements)

References 7 publications

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“…One of the issues in CVD WN x deposition is the reliability problem pertaining to the possible inclusion of F in the resulting WN x liner because F is a fast diffuser in metals such as copper. Even though F was not detected in our analysis, it was observed by Ecke et al [13] that F content in the PECVD WN x films deposited by using the same WF 6 -N 2 -H 2 system is very low, as observed by higher resolution time-of-flight secondary ion mass spectrometry.…”

Section: Resultscontrasting

confidence: 52%

Microstructural properties of plasma-enhanced chemical vapor deposited WNx films using WF6–H2–N2 precursor system

Kim

2007

Current Applied Physics

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Section: Resultscontrasting

confidence: 52%

Microstructural properties of plasma-enhanced chemical vapor deposited WNx films using WF6–H2–N2 precursor system

Kim

2007

Current Applied Physics

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“…Many nitrides have been widely studied because of their application in microelectronics, such as TiN [1], TaN [2], WN [3], Ti-Si-N [4], Ta-Si-N [5] and W-Si-N [6], which are excellent diffusion barriers in copper interconnect systems.…”

Section: Introductionmentioning

confidence: 99%

Study of ultrathin vanadium nitride as diffusion barrier for copper interconnect

Zhou

Chen

et al. 2006

Microelectronic Engineering

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“…7,8 Depositions of WN x and WN x C y typically use ammonia and WCl 6 , WF 6 or W(CO) 6 as co-reactants. 4,[9][10][11][12] Despite being volatile, simple, and cost-effective, these chemistries generally require high deposition temperature, can introduce impurities, and can yield corrosive byproducts. To overcome these drawbacks, organometallic precursors have drawn considerable interest for metal-organic CVD (MOCVD).…”

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confidence: 99%

Low Temperature Deposition of WN_xC_yDiffusion Barriers Using WN(NEt₂)₃as a Single-Source Precursor

O’Donohue

McClain

Koley

et al. 2014

ECS J. Solid State Sci. Technol.

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Deposition of high quality WN x C y barrier films at very low temperature using aerosol-assisted chemical vapor deposition (AACVD) is reported. The single-source tungsten nitrido complex, WN(NEt 2 ) 3 , was designed to reduce the temperature required for WN x C y film deposition in an effort to minimize thermal stresses on neighboring layers in device structures. Using either pyridine or heptane as a solvent, WN x C y films were successfully deposited at temperatures from 100 to 650 • C. Film growth in pyridine and heptane at low temperature (100-350 • C and 125-550 • C, respectively) showed weak temperature dependence consistent with mass-transfer limited growth. At higher temperature the growth rate decreased rapidly with apparent activation energy of 0.375 ± 0.057 eV. The effects of solvent choice on film properties including composition, crystallinity, density, and surface roughness are discussed. Films deposited at low temperature (<350 • C) were highly smooth, amorphous and with a stoichiometry approaching W 2 NC; characteristics desirable for diffusion barrier applications. In Cu diffusion barrier tests, Cu (∼ 100 nm)/WN x C y (∼ 5.5 nm)/Si stacks subjected to a 500 Thin interlayer materials are increasingly being used in electronic devices to modify interfacial characteristics, including the film work function, chemical, thermal and charge transport rates, surface tension, and adhesion. Due to their low resistivity, appropriate work function, and thermal stability, refractory metal nitrides have been proposed for a number of applications, ranging from wafer level hermetic sealing 1 to field effect transistor (FET) gate electrodes. 2 In particular, the tungsten-based materials WN x and WN x C y have been considered as an alternative for both diffusion barriers 3,4 and gate electrodes 5 due to their low resistivity, appropriate and tunable work function (4.39-5.01 eV 6 ), thermal and mechanical stability, good barrier performance, and processing simplicity. 7,8 Depositions of WN x and WN x C y typically use ammonia and WCl 6 , WF 6 or W(CO) 6 as co-reactants. 4,[9][10][11][12] Despite being volatile, simple, and cost-effective, these chemistries generally require high deposition temperature, can introduce impurities, and can yield corrosive byproducts. To overcome these drawbacks, organometallic precursors have drawn considerable interest for metal-organic CVD (MOCVD). Typically, these complexes include nitrogen-bound moieties such as amido, imido, hydrazido, amidinate or guanidinate ligands, 13,14 and have been used in single-source or NH 3 /H 2 co-reacting conditions to deposit WN x . Unfortunately, many of these precursors still require relatively high deposition temperature (>350• C) 15-22 that can compromise contact level structures 2,23 and neighboring dielectrics. 24In addition, the development of ultra-low temperature CVD WN x C y has potential application to flexible and organic devices. Therefore, there is interest in developing organometallic precursors for ultra-low deposition temperature. We h...

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Development of PECVD WNx ultrathin film as barrier layer for copper metallization

Cited by 25 publications

References 7 publications

Microstructural properties of plasma-enhanced chemical vapor deposited WNx films using WF6–H2–N2 precursor system

Microstructural properties of plasma-enhanced chemical vapor deposited WNx films using WF6–H2–N2 precursor system

Study of ultrathin vanadium nitride as diffusion barrier for copper interconnect

Low Temperature Deposition of WN_xC_yDiffusion Barriers Using WN(NEt₂)₃as a Single-Source Precursor

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Development of PECVD WNx ultrathin film as barrier layer for copper metallization

Cited by 25 publications

References 7 publications

Microstructural properties of plasma-enhanced chemical vapor deposited WNx films using WF6–H2–N2 precursor system

Microstructural properties of plasma-enhanced chemical vapor deposited WNx films using WF6–H2–N2 precursor system

Study of ultrathin vanadium nitride as diffusion barrier for copper interconnect

Low Temperature Deposition of WNxCyDiffusion Barriers Using WN(NEt2)3as a Single-Source Precursor

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Low Temperature Deposition of WN_xC_yDiffusion Barriers Using WN(NEt₂)₃as a Single-Source Precursor