Study of ultrathin vanadium nitride as diffusion barrier for copper interconnect

Elastic constants, Poisson ratios, and the elastic anisotropy of VN(001), (011), and (111) epitaxial layers grown by reactive magnetron sputter deposition

“…44 Stoichiometric VN films with N/V ¼ 1.00 6 0.05 are obtained with T s ¼ 430 C (T s /T m ¼ 0.3). The VN mass density determined from the combination of RBS areal density and XTEM thickness measurements, q ¼ 6.1 g/cm 3 , is in good agreement with reported values for bulk VN. 45 All VN films discussed below are grown at 430 C. Typical XRD x-2h scans from VN films grown on 001-, 011-, and 111-oriented MgO substrates are plotted in Figures 1(a)-1(c) as a function of 2h between 10 and 110 .…”

“…To determine SAW velocities v SAW in VN(001), we fabricate polydimethylsiloxane (PDMS) phase-shift mask gratings, (CH 3 ) 3 Si[O(CH 3 ) 2 Si] n OSi(CH 3 ) 3 , with bars along the [100] direction using a Si mold as described in Ref. 32.…”

“…NaCl-structure d-VN x has an extended single-phase field with x ranging from 0.8 to 1.0 at T s ¼ 500 C. 1 Polycrystalline VN x thin films are employed in a variety of applications, including diffusion barriers in microelectronic devices, 2,3 anodes in rechargeable lithium ion batteries, 4 and hard wear-, abrasion-, and scratch-resistant coatings. 5 The wide range of VN x applications stems not only from high hardness [6][7][8] and mechanical strength 6 but also from the enhanced physical properties achieved with VN-based nanostructures and alloys.…”

Non-crystalline Zr–Si diffusion barrier for Cu/Si contact system under different sputtering power

“…It is also found that the oxygen was incorporated more with the increasing of the annealing temperature. This oxygen depth profiles are similar to that of Cu/VN/ Si samples reported by Qu et al [20]. Oxygen atoms might locate interstitially or stuff at the grain boundaries of the Zr-Si matrix.…”

Enhancing the reliability of n+–p junction diodes using plasma treated tantalum barrier film

“…As the technology node move to 0.18 lm and below, a thin barrier layer is necessary to lower the resistance of the total line interconnect and/or via. It becomes probably inappropriate to use a multilayered barrier thicker than 30 nm, and hence investigations of the thermal stability and barrier properties of ultrathin barrier layers in the Cu metallization system are important [13,14,[16][17][18][19][20]. In paral- lel with the development of technology, the sizes of node move to 0.18 lm and below, a thin barrier layer is necessary to lower the resistance of the total line interconnect and/or via.…”