2019
DOI: 10.1039/c8ra09441a
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Pressure-induced metallization in MoSe2 under different pressure conditions

Abstract: Our experimental results clearly indicate that the metallization behavior of MoSe2 exhibits significant dependence on the pressure environments.

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Cited by 34 publications
(60 citation statements)
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“…Yang et al and Sharma et al have reported that E 1 2g and A 1 g are the most intense vibrational modes for molybdenum dichalcogenides. [21][22][23] Peaks corresponding to E 1 2g and A 1 g modes for MoS 2 (Figure 9a) are prominent at 384.6 and 410.2 cm À1 , respectively. A 1 g indicates an out-of-plane symmetric displacement of S atoms, whereas E 1 2g suggests an in-layer displacement.…”
Section: Resultsmentioning
confidence: 99%
“…Yang et al and Sharma et al have reported that E 1 2g and A 1 g are the most intense vibrational modes for molybdenum dichalcogenides. [21][22][23] Peaks corresponding to E 1 2g and A 1 g modes for MoS 2 (Figure 9a) are prominent at 384.6 and 410.2 cm À1 , respectively. A 1 g indicates an out-of-plane symmetric displacement of S atoms, whereas E 1 2g suggests an in-layer displacement.…”
Section: Resultsmentioning
confidence: 99%
“…This was possibly related to the different grain size, which may have resulted in a discrepancy of the pressure point of phase transition and the width of the phase coexistence regime reported by Olsen et al and us. To check the high-pressure metallization of nanocrystalline rutile, we performed temperaturedependent electrical conductivity measurements up to 25.0 GPa at 120-240 K. As usual, the electrical conductivity of sample increased with increasing temperature for semiconductor, whereas the metal To check the high-pressure metallization of nanocrystalline rutile, we performed temperaturedependent electrical conductivity measurements up to 25.0 GPa at 120-240 K. As usual, the electrical conductivity of sample increased with increasing temperature for semiconductor, whereas the metal exhibited a negative relation between the temperature and electrical conductivity [15][16][17][18]. The temperature-dependent electrical conductivity measurements of nanocrystalline rutile at selected pressures are plotted in Figure 5.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the metallization of nanocrystalline rutile is attributed to the enhancement of defect concentration rather than the closure of bandgap. exhibited a negative relation between the temperature and electrical conductivity [15][16][17][18]. The temperature-dependent electrical conductivity measurements of nanocrystalline rutile at selected pressures are plotted in Figure 5.…”
Section: Resultsmentioning
confidence: 99%
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