“Pressing Electricity”: A Hundred Years of Hall Effect in Crystalline Metals and Alloys

Hurd, C. M.

doi:10.1007/978-1-4757-1367-1_1

Cited by 15 publications

(3 citation statements)

References 77 publications

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“…[10], although they overestimate the size of σ H . The inset, which shows the same quantity as a function of magnetic field, indicates that we are in a low field regime, as is expected for a system with strong scattering [11,12]. Figure 3 is our main result: it shows that cot Θ H obeys the simple form A + BT 2 , in agreement with experiment.…”

Section: Fermi Liquid (Nafl)supporting

confidence: 82%

Anomalous Hall Effect inYBa2Cu3O7

1996

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The temperature dependence of the normal state Hall effect and magnetoresistance in YBa 2 Cu 3 O 7 is investigated using the Nearly Antiferromagnetic Fermi Liquid description of planar quasiparticles. We find that highly anisotropic scattering at different regions of the Fermi surface gives rise to the measured anomalous temperature dependence of the resistivity and Hall coefficient while yielding the universal temperature dependence of the Hall angle observed for both clean and dirty samples. This universality is shown to arise from the limited momentum transfers available for the anomalous, spin fluctuation scattering and is preserved for any system with strong antiferromagnetic correlations.Typeset using REVT E X 1

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Section: Fermi Liquid (Nafl)supporting

confidence: 82%

Anomalous Hall Effect inYBa2Cu3O7

1996

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“…This strongly suggests that the primary contribution to the anomalous Hall effect is from the side jump mechanism, 26 which scales inversely with the mean free path. 27 If the carrier polarization is proportional to the magnetization as inferred from the anomalous Hall data for some half-metallic Heusler alloys, 28 then R S ϭ ⌬L/ ϰ 2 , where is the mean free path and ⌬L is the side jump distance ͑of order 1 Å͒; this suggests a T 4 dependence since ϰT 2 above 100 K. A more detailed analysis along the lines of Ref. 28 is made more difficult here by the presence of two bands, both of which may contribute to side jump, 29 and whose relative contributions are changing with temperature, as indicated by the Hall measurements.…”

Section: Figmentioning

confidence: 99%

Evidence for two-band magnetotransport in half-metallic chromium dioxide

et al. 2000

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Magnetotransport measurements were made on patterned, ͑110͒ oriented CrO 2 thin films grown by the high-pressure, thermal decomposition of CrO 3 onto rutile substrates. The low-temperature Hall effect exhibits a sign reversal from positive to negative as the magnetic field is increased above 1 T, which may be interpreted within a simple two-band model as indicating the presence of highly mobile ( h ϭ0.25 m 2 /V s) holes as well as a much larger number of less mobile electrons (nϭ0.4 electrons/Cr͒. Between 50 and 100 K, the field at which the sign reversal occurs rapidly increases and a contribution from the anomalous Hall effect becomes significant, while the large, positive transverse magnetoresistance ͑MR͒ observed at low temperatures changes over to a predominantly negative MR. These changes correlate with a thermally activated dependence in the resistivity of the form T 2 e Ϫ⌬/T with ⌬Ϸ80 K, reflecting the lack of temperature dependence in the resistivity at low temperatures and a T 2 behavior above 100 K. The high mobilities at low temperature which result in the observed positive MR reflect the suppression of spin-flip scattering expected for a half-metallic system. However, the changes in magnetotransport above the temperature ⌬ must be due to the onset of spin-flip scattering, even though k B ⌬ is much less than the expected energy gap in the minority spin density of states. The significance of ⌬ is discussed in terms of recent models for another half-metallic system, the perovskite manganites, and the possible formation of ''shadow bands.''

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“…It was found that except for normal Hall contribution proportional to magnetic field B, there is also anomalous component proportional to magnetization [21,24,79]: pH = R0 B + Ra M. Separate measurements showed that Ra is proportional to the sheet resistivity of the epilayer (= Ux/.Ix), indicating that skew scattering is responsible for anomalous term [79]. Since a typical hole concentration is high, the normal term is small as compared to the anomalous one.…”

Section: Transport Propertiesmentioning

confidence: 99%

Diluted Magnetic III-V Semiconductors

Twardowski

2000

Acta Phys. Pol. A

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During recent years diluted magnetic semiconductors based on III-V compounds have been of considerable interest. In this respect we review the basic properties of these materials, which are nearly exclusively Mn-based systems, such as GaMnAs, InMnAs, GaMnSb, and GaN:Mn. We discuss the nature of Mn impurity. Different Mn centers are considered and experimental pieces of evidence suggesting the dominating role of Mn (d5 ) configuration are given. Then we analyze s, p -d exchange, together with resulting magnetooptical properties (in particular absorption edge slitting for heavily p-type GaMnAs). The coupling between Mn ions (d-d exchange) and ferromagnetic ordering observed in InMnAs and GaMnAs is the next subject. Some mechanisms responsible for this ordering are presented. Finally we discuss transport properties and some selected problems of quantum structures based on III-V diluted magnetic semiconductors.

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“Pressing Electricity”: A Hundred Years of Hall Effect in Crystalline Metals and Alloys

Cited by 15 publications

References 77 publications

Anomalous Hall Effect inYBa2Cu3O7

Anomalous Hall Effect inYBa2Cu3O7

Evidence for two-band magnetotransport in half-metallic chromium dioxide

Diluted Magnetic III-V Semiconductors

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