Present Status of Exposure Tool Development for Low Energy Electron-beam Proximity Projection Lithography.

Endo, Akihiro; Higuchi, Akira; Kasahara, Haruo; Nozue, Hiroshi; Shimazu, Nobuo; Fukui, Toyoji; Yasumitsu, Naoki; Miyatake, Tsutomu; Anazawa, Norimichi

doi:10.2494/photopolymer.15.403

Cited by 5 publications

(1 citation statement)

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“…The combination of alignment optics and flexible electron beam system is making the high accuracy over lay result by LEEPL-3000. The recent results of overlay or principles of e-beam correction with LEEPL-3000 or LEEPL Beta tool 3,4,5,6) are introduced.…”

Section: Introductionmentioning

confidence: 99%

LEEPL (low-energy electron beam proximity-projection lithography) overlay status

et al. 2004

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The image placement (IP) error correction is one of the advantages for E-beam lithography tool. LEEPL(Low Energy Electron beam Proximity-projection Lithography) 1,2) which is using stencil mask is able to shift the mask patter image by e-beam angle control. To use this unique technique week point of the stencil mask distortion is compensated. The flexibility of LEEPL E-beam IP correction for over lay is evaluated. The LEEPL E-beam IP correction is done by Sub-Deflector beam control. The feature to improve the over lay accuracy is introduced. It is not only for Mask IP error correction but also for Mask distortion by holding, under layer shot distortion and wafer chucking distortion.

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Section: Introductionmentioning

confidence: 99%

LEEPL (low-energy electron beam proximity-projection lithography) overlay status

et al. 2004

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Impacts of point spread function accuracy on patterning prediction and proximity effect correction in low-voltage electron-beam–direct-write lithography

Liu

Shen

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Electron-beam–direct-write lithography at lower accelerating voltages has been considered as a candidate for next-generation lithography. Although long-range proximity effects are substantially reduced with the voltage, proximity effect correction (PEC) is still necessary since short-range proximity effects are relatively prominent. The effectiveness of model-based PEC can be limited severely if an inaccurate point spread function (PSF) characterizing electron scattering within resist is adopted. Recently, a new PSF form using a promising calibration method has been developed to more accurately characterize the electron scattering and thus significantly improve patterning fidelity at 5 keV. However, influences of adopting the conventional and new PSF forms for the usage of patterning practical circuit layouts have not been intensively studied. This work extensively investigates impacts of PSF accuracy on patterning prediction and PEC under different resist thickness conditions suitable for various lithographic half-pitch nodes, where the critical features of practical circuit layouts are used to quantitatively evaluate their performance. In addition, patterning fidelity limitation suffered from proximity effects is examined to determine whether PEC should be applied. Simulation results indicate that the new PSF form can significantly improve the fitting accuracy, patterning prediction, and PEC results over the conventional PSF forms, especially for circuit layouts with smaller feature sizes.

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Low energy electron beam proximity projection lithography

Samoto¹,

Yoshida²,

Takano

et al. 2005

J. Micro/Nanolith. MEMS MOEMS

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Present Status of Exposure Tool Development for Low Energy Electron-beam Proximity Projection Lithography.

Cited by 5 publications

References 0 publications

LEEPL (low-energy electron beam proximity-projection lithography) overlay status

LEEPL (low-energy electron beam proximity-projection lithography) overlay status

Impacts of point spread function accuracy on patterning prediction and proximity effect correction in low-voltage electron-beam–direct-write lithography

Low energy electron beam proximity projection lithography

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