1999
DOI: 10.1016/s0169-4332(98)00654-0
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Preparation of ZnO thin films for high-resolution field emission display by electron beam evaporation

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Cited by 155 publications
(71 citation statements)
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“…ZnO, a wide band gap semiconductor (3.37 eV), has a range of potential applications as photocatalysts, 1 gas sensors, 2 lasers, 3 displays, 4 high-density optical storage devices 5 and varistors.…”
Section: Introductionmentioning
confidence: 99%
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“…ZnO, a wide band gap semiconductor (3.37 eV), has a range of potential applications as photocatalysts, 1 gas sensors, 2 lasers, 3 displays, 4 high-density optical storage devices 5 and varistors.…”
Section: Introductionmentioning
confidence: 99%
“…Firstly the pH of the zinc nitrate-urea mixture was adjusted to 10 using NH 4 OH solution and then irradiated for 18 min. In a second experiment, the reactant mixture was first irradiated for 14 min, allowed to cool down to room temperature, the pH adjusted to 10 with NH 4 OH and then the MW irradiation was carried out for a further 18 min.…”
mentioning
confidence: 99%
“…[1][2][3] As we know, when the particle sizes of many semiconductors, ZnO included, decrease to nanometer or sub-nanometer scales, these materials usually exhibit quantum size effects, presenting different electric and optical properties from bulk materials. [4][5][6] The study on subnanometric ZnO clusters as a medium between single molecules and nanocrystals is an active area now days, [7][8][9][10][11] but their luminescent properties are rarely reported.…”
Section: Introductionmentioning
confidence: 99%
“…Compared to the powder form, Y 2 O 3 :Eu in thin-film form could offer several advantages, such as better thermal stability, good adhesion to the substrate surface, higher resolution, and uniform properties across the covered area [10]. However, in spite of these potential advantages, relatively little work has so far been carried out on the thinfilm form of Y 2 O 3 :Eu.…”
Section: Introductionmentioning
confidence: 99%