Preparation of transparent, electrically conducting ZnO film from zinc acetate and alkoxide

Ohya, Yutaka; Saiki, Hisao; Takahashi, Yasutaka

doi:10.1007/bf00355977

Cited by 107 publications

(45 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These films are prepared by several processes like metal organic chemical vapor deposition [1,2], dc or rf magnetron sputtering [3,4], spray pyrolysis [5,6] and the sol-gel process [7,8]. The films prepared by different methods have large variations of resistivities and Hall coefficients.…”

Section: Introductionmentioning

confidence: 99%

Transport Properties of As-Prepared Al-Doped Zinc Oxide Films Using Sol-Gel Method

Paul

Bandyopadhyay

Sen

2002

phys. stat. sol. (a)

View full text Add to dashboard Cite

ZnO films doped with different concentrations of aluminum (AZO) have been prepared by the sol-gel technique. The electrical properties of the samples have been measured on as-deposited films. Two of the films have been heat treated in vacuum at 400 C to determine the changes in transport properties. The electrical properties, i.e. conductivity and Hall coefficient, have been studied from room temperature down to low temperatures. Combining these two it has been possible to determine the Hall mobilities, carrier concentrations and the barrier height at the grainboundary region. Attempts have been made to explain the barrier height assuming monovalent trapping states at the grain boundary and the density of trapped states has been estimated from the experimental data. As carrier concentration increases after heat treatment of the samples in vacuum the role of non-ionized impurities decreases.

show abstract

Section: Introductionmentioning

confidence: 99%

Transport Properties of As-Prepared Al-Doped Zinc Oxide Films Using Sol-Gel Method

Paul

Bandyopadhyay

Sen

2002

phys. stat. sol. (a)

View full text Add to dashboard Cite

show abstract

“…[2,3] Most oxides, such as TiO 2 , [4] ZrO 2 , [5] ZnO, [6,7] and indium tin oxide (ITO), [2] are well-known n-type semiconductors that are characterized by the electron-transport properties of oxygen vacancies. As NiO x is a well-known p-type semiconductor be-cause of the presence of Ni vacancies, [8] a p-type NiO x /n-type oxide is a possible alternative to silicon-based diodes.…”

mentioning

confidence: 99%

A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories

et al. 2006

View full text Add to dashboard Cite

A one-bit cell of a general nonvolatile memory consists of a memory element and a switch element. Several memory elements have been tried given that any bistable states, that is, two charging states, two spin states, or two resistance states, can be used for a memory element. On the other hand, silicon-based transistors have been the most popularly used switch element. However, silicon-based transistors do not conform to high-density, nonvolatile memories with three-dimensional (3D) stack structures due to their high processing temperatures and the difficulty of growing high-quality epitaxial silicon over metals. Here, we show a low-temperaturegrown oxide diode, Pt/p-NiO x /n-TiO x /Pt, applied as a switch element for high-density, nonvolatile memories. The diode exhibits good rectifying characteristics at room temperature: a rectifying ratio of 10 5 at ± 3 V, a forward current density of up to ∼ 5×10 3 A cm -2 , an ideality factor of 4.3, and a turn-on voltage of 2 V. Furthermore, we verify its ability to allow and deny access to the Pt/NiO/Pt memory element with two stable resistance states. Under the forward-bias condition, we could access the memory element and change the resistance state, although access was denied under the reverse bias condition. This one-diode/one-resistor (1D/1R) structure could be a promising building block for high-density, nonvolatile random-access memories with 3D stack structures.

show abstract

“…A rather low resistivity was obtained also in ZnO sol-gel coatings doped by Al or In and annealed in an inert atmosphere [19,45]. Values of about 3'1O-3 0cm are reported but reactions at high temperature (900°C) with the fused silica substrate are not excluded [46J.…”

Section: Electrical Conductive Coatingsmentioning

confidence: 94%

Coatings for High Temperature Use

Köstlin¹

2004

Sol-Gel Technologies for Glass Producers and Users

View full text Add to dashboard Cite

Oxidation resistant nickel-aluminide coatings are designed to develop a protective alumina scale during high temperature exposure. It is well established that platinum additions, typically about 6-8 at%, provide substantial improvements in oxidation resistance of such coatings, yet the nature of the platinum effect is still not fully understood. In this work, the oxidation behavior of two commercial NiAl and NiPtAl coatings deposited on the same Ni-base single crystal alloy CMSX-4 was analyzed. Cyclic and isothermal oxidation tests were conducted at 1150 o C in air. Microstructure development and alumina/coating interface chemistry were studied as a function of oxidation time. Numerous voids developed at the Al 2 O 3 /NiAl interface, and sulfur was found to segregate at the void surfaces and at the contact interface, leading to spallation of the scale over the convex areas along ridges on the coating surface. The presence of platinum prevented sulfur segregation and void formation at the Al 2 O 3 /NiPtAl interface. As a result, the Al 2 O 3 scale on the NiPtAl coating remained adherent and virtually no spallation was observed even after prolonged cyclic oxidation.

show abstract

Preparation of transparent, electrically conducting ZnO film from zinc acetate and alkoxide

Cited by 107 publications

References 13 publications

Transport Properties of As-Prepared Al-Doped Zinc Oxide Films Using Sol-Gel Method

Transport Properties of As-Prepared Al-Doped Zinc Oxide Films Using Sol-Gel Method

A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories

Coatings for High Temperature Use

Contact Info

Product

Resources

About