Tin doped indium oxide (ITO) films are highly transparent in the visible region, exhibiting high reflectance in the infrared region, and having nearly metallic conductivity. Owing to this unusual combination of electrical and optical properties, this material is widely applied in optoelectronic devices. The association of these properties in a single material explains the vast domain of its applicability and the diverse production methods which have emerged. Although the different properties of tin doped indium oxide in the film form are interdependent, this article mainly focuses on the electrical aspects. Detailed description of the conduction mechanism and the main parameters that control the conductivity is presented. On account of the large varieties and differences in the fabrication techniques, the electrical properties of ITO films are discussed and compared within each technique.

Electrical and photoelectrical properties of nondoped and doped zinc oxide films coated on glass plates by the dip-coating method are investigated at room temperature in various ambient atmospheres. The dark conductivity of the nondoped films exponentially decreased with decreasing film thickness while the conductivity under illumination of 350 nm light was almost constant at 100 S·cm-1 irrespective of the film thickness. Consequently thinner films showed larger photoresponse than thicker films. This thickness dependence is explained by the variation of ZnO particle size with the film thickness (fine particle model) and the additional effect of the Schottky barrier generated between the film and gold electrodes.

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A ZnO thin film was deposited on a Si wafer having an oxidized SiO2 layer using a chemical solution deposition process and was applied to a bottom-gate type thin film transistor (TFT). The films prepared by combined heating at 600° and 900°C exhibited typical enhancement-type TFT characteristics with electrons as carriers. The low heating temperature around 600°C degraded the insulating properties of the SiO2 layer but high temperature annealing recovered that.

Transparent, aqueous colloidal titanate solutions were prepared by a reaction between titanium alkoxide and alkylamines or tetraalkylammonium hydroxides. The chemical species containing titanium atoms were found to be a colloidal particle (15 nm) with a layered structure. The formation reaction can be explained as an acid−base reaction between the amines and titanic acid derived from the alkoxide to yield ammonium titanates. Both the basicity of the amines and the sizes of the conjugate acid (ammonium cations) are crucial factors to determine whether the aqueous solutions can be prepared. Similarly, aqueous oxo metalate solutions of V, Nb, Ta, Al, Si, and Sn are easily prepared from corresponding alkoxides.

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Decomposition reaction of dialkylamides of boron, silicon, tin, titanium, zirconium, niobium, and tantalum was investigated. The amides of transition metals decomposed to the corresponding nitrides at 300~176 whereas those of boron, silicon, and tin yielded elemental deposits at higher temperatures. In the deposition of titanium nitride from titanium tetrakis(dimethylamide), two optimum temperatures at 400 ~ and at 800~ in nitrogen or hydrogen atmosphere were found, but in argon only low temperature deposition was possible. The low and high temperature processes are discussed in relation to mass spectral analysis of the exhaust gases formed at various decomposition temperatures of titanium amide.