Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition

Ohya, Yutaka; Niwa, Tsukasa; Ban, Takayuki; Takahashi, Yasutaka

doi:10.1143/jjap.40.297

Cited by 186 publications

(81 citation statements)

References 7 publications

(7 reference statements)

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“…29) Around 2000, polycrystalline ZnO thin films were used for channels in many researches, and typical n-type oxides such as SnO 2 were also examined. The first report on ZnO TFTs since the revival of research was on the application of thin films synthesized by a liquid-phase process to active layers, 30) which is one of the significant contributions of Japanese scientists. 31,32) Polycrystalline thin films have the problems of unstable characteristics attributable to grain boundaries and the difficulty in fabricating homogeneous TFTs.…”

Section: Applications Of Taos Tftsmentioning

confidence: 99%

Exploring Electro-active Functionality of Transparent Oxide Materials

Hosono

2013

Jpn. J. Appl. Phys.

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Ceramics, one of the earliest materials used by humans, have been used since the Stone Age and are also one of the core materials supporting modern society. In this article, I will review the features of transparent oxides, the main components of ceramics, and the progress of research on their electro-active functionalities from the viewpoint of material design. Specifically, the emergence of the functionality of the cement component 12CaO·7Al2O3, the application of transparent oxide semiconductors to thin-film transistors for flat panel displays, and the design of wide-gap p-type semiconductors are introduced along with the progress in their research. In addition, oxide semiconductors are comprehensively discussed on the basis of the band lineup.

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Section: Applications Of Taos Tftsmentioning

confidence: 99%

Exploring Electro-active Functionality of Transparent Oxide Materials

Hosono

2013

Jpn. J. Appl. Phys.

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“…[7] These include, sputtering, [8][9][10] pulsed-laser deposition (PLD), [11] metalorganic chemical vapour deposition (MOCVD), [12,13] as well as solution processing methods such as dip coating, [14] spin coating [15][16][17][18] and spray pyrolysis (SP). [19][20][21] Solution processing, in particular, offers a number of advantages, which are well known from the area of organic electronics, with the most important being the prospect of easy patterning on large area substrates.…”

mentioning

confidence: 99%

High‐Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere

et al. 2009

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Research on solution processible semiconducting materials is rapidly making progress towards the goal of providing viable alternatives to silicon-based technologies for applications where lower-cost manufacturing and new product features such as mechanical flexibility and optical transparency are desired. One family of materials that has been the subject of intense research over the past twenty years is organic semiconductors.[1] Use of organic materials offers the prospect of low manufacturing cost combined with some desirable physical characteristics such as ease of processing and mechanical flexibility. Despite the impressive progress achieved in recent years a number of obstacles, especially poor air-stability, device performance that is insufficient for a variety of applications and device to device variability, have to be overcome before the advantageous manufacturability, and hence the economic benefits associated with organic semiconductors, can be fully exploited.While research in the area of organic materials and devices has been intensifying, a different class of semiconducting materials, namely metal oxide semiconductors (MOxS), has emerged as possible alternative technology.[2] Metal oxides incorporate important qualities that are currently absent from organic-based semiconductors. For instance, they generally exhibit higher carrier mobilities which are already sufficient for use in optical displays, such as current-driven organic light-emitting diode (OLED) based displays. An additional advantage of MOxS relevant to many electronic applications is the superb optical transparency resulting -2 -from their wide bandgap. The latter makes oxide semiconductors particularly interesting for use in transparent electronics [3] as well as in backplanes for the next generation of currentdriven displays. [4,5] For application in see-through electronics, in particular, transparent thin-film transistors (TFTs) with high switching speeds and low power consumption are required.[6] So far the opacity of amorphous silicon and the insufficient performance of organic semiconductors have impeded the development of such devices. In this respect, MOxS materials simultaneously fulfil the requirements for optical transparency and high charge carrier mobility. In addition, they provide excellent chemical stability combined with mechanical robustness. [7] A further advantage associated with MOxS is the diverse range of techniques that can be employed for thin-film deposition.[7] These include, sputtering, [8][9][10] pulsed-laser deposition (PLD), [11] metalorganic chemical vapour deposition (MOCVD), [12,13] as well as solution processing methods such as dip coating, [14] spin coating [15][16][17][18] and spray pyrolysis (SP). [19][20][21] Solution processing, in particular, offers a number of advantages, which are well known from the area of organic electronics, with the most important being the prospect of easy patterning on large area substrates. In most cases, however, control over the morphology of solution processed film...

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“…ZnO is a well known transparent n-type semiconductor with wide direct band gap energy of 3.34ev at room temperature. Good quality ZnO films have been prepared by many methods, such as RF sputtering [9][10][11][12][13] ion beam sputtering [14], pulsed-laser deposition (PLD) [15][16][17], and solution processing from zinc acetate-based (dip coating) [18,19], zinc nitrate-based (spin-coating) [20]. Among all, magnetron sputtering is characterized by several advantages such as low substrate temperature (down to room temperature), good adhesion of films on substrate, very good thickness uniformity and high density of the films.…”

Section: Introductionmentioning

confidence: 99%

“…They have investigated the effect of deposition conditions on the film properties such as grain size. [21][22][23][24] There are also several studies on fabrication of zinc oxide TFTs [9][10][11][12][13][14][15][16][17][18][19][20] but the investigation of TFT performance in terms of grain size of ZnO-channel has not been done yet. In this paper, we fabricated several zinc oxide TFTs with ZnO channel deposited in different sputtering powers.…”

Section: Introductionmentioning

confidence: 99%

Grain Size Dependence Characteristic of Nanocrystalline ZnO-Channel Thin Film Transistors

Takalloo¹,

Soleimani²

2010

ECS Trans.

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Bottom gate ZnO-Channel test structure thin film Transistors are fabricated on 100 p-type silicon wafers. ZnO is deposited by RF sputtering in different powers of 100, 150, 200, 250 and 300W. We showed that Ion to Ioff ratio of transistors has a reverse trend as grain size of ZnO channel. The transistor which the channel is fabricated in power of 150W has the lowest logarithm of Ion to Ioff ratio of 2.5 and the related channel layer has the largest grains and the one which its channel is fabricated in power of 300W has the highest value of about 6 and the smallest channel grain size. This transistor has also the highest field effect mobility of 0.5 VS/cm 2 and the highest Vth of 20V among all. The subthreshold slope of this transistor is calculated 3V/dec which is the lowest among all.

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Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition

Cited by 186 publications

References 7 publications

Exploring Electro-active Functionality of Transparent Oxide Materials

Exploring Electro-active Functionality of Transparent Oxide Materials

High‐Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere

Grain Size Dependence Characteristic of Nanocrystalline ZnO-Channel Thin Film Transistors

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