Preparation of TiN thin films by the dynamic mixing method using an N2+ ion beam of 1 keV

Takano, Ichiro; Isobe, S.; Sasaki, Teikichi A.; Baba, Yuji

doi:10.1016/0040-6090(89)90633-0

Cited by 8 publications

(1 citation statement)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These unique combinations of TiN characteristics are responsible for its large scale of applications. TiN layers are applied as hard and protective coatings against abrasion, erosion and corrosion for tools and wear parts, diffusion barriers in silicon-device technology, solar energy absorbers, transparent heat mirrors and surface decoration for commercial goods [1][2][3][4][5]. Numerous physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques are available for the deposition of TiN coatings [10].…”

Section: Introductionmentioning

confidence: 99%

Ion Beam Assisted Deposition of TiN Thin Films on Si Substrate

Milinović

Milosavljević²,

Popović³

et al. 2006

MSF

View full text Add to dashboard Cite

In this paper we present a study of the formation of TiN thin films during the IBAD process. We have analyzed the effects of process parameters such as Ar+ ion energy, ion incident angle, Ti evaporation rates and partial pressure of N2 on preferred orientation and resistivity of TiN layers. TiN thin films were grown by evaporation of Ti in the presence of N2 and simultaneously bombarded with Ar+ ions. Base pressure in the IBAD chamber was 1⋅10-6 mbar. The partial pressure of Ar during deposition was (3.1 – 6.6)⋅10-6 mbar and partial pressure of N2 was 6.0⋅10-6 - 1.1⋅10-5 mbar. The substrates used were Si (100) wafers. TiN thin layers were deposited to a thickness of 85 – 360 nm at deposition rates of Ti from 0.05 to 0.25nm/s. Argon ion energy was varied from 1.5 to 2.0 keV and the angle of ion beam incidence from 0 to 30o. All samples were analyzed by Rutherford backscattering spectrometry (RBS). The changes in concentration profiles of titanium, nitrogen and silicon were determined with 900 keV He++ ion beam. The RBS spectra were analyzed with the demo version of WiNDF code. We have also used X-ray diffraction (XRD) for phase identification. The resistivity of samples was measured with four-point probe method. The results clearly show that TiN thin layer grows with (111) and (200) preferred orientation, depending on the IBAD deposition parameters. Consequently, the formation of TiN thin layers with wellcontrolled crystalline orientation occurs. Also, it was found that the variations in TiN film resistivity could be mainly attributed to the ion beam induced damage during the IBAD process.

show abstract