Abstract:In this paper we present a study of the formation of TiN thin films during the IBAD
process. We have analyzed the effects of process parameters such as Ar+ ion energy, ion incident
angle, Ti evaporation rates and partial pressure of N2 on preferred orientation and resistivity of TiN
layers. TiN thin films were grown by evaporation of Ti in the presence of N2 and simultaneously
bombarded with Ar+ ions. Base pressure in the IBAD chamber was 1⋅10-6 mbar. The partial pressure
of Ar during deposition was (3.1 – 6.6… Show more
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