Preparation of Stable Counters by Means of Compensating Germanium with Radiation Produced Structural Defects

Transport of the charge carriers in SiC-detector structures after extreme radiation fluences

“…This effect was clearly demonstrated in Ge detectors strongly compensated by gamma irradiation and described by the authors of [14] in terms of existence of a ''strong'' and a ''weak'' field regions in the SCR.…”

“…[14], this can be explained in terms of nonuniformity of the field EðxÞ across the detector. The nonuniformity appears because of the thermal ionization of centers in the SCR and gives rise to regions of ''strong'' and ''weak'' fields.…”

“…The nonuniformity appears because of the thermal ionization of centers in the SCR and gives rise to regions of ''strong'' and ''weak'' fields. On the first (strong field), voltage is applied to the detector (U) while the voltage on the second (weak field) does not exceed a builtin voltage [14]. As U increases, the ''strong-field'' region extends and can cover the whole detector width.…”

Present status of undoped semi-insulating LEC bulk GaAs as a radiation spectrometer

“…(1) with an applied reverse bias results in a net ionization distribution ( I NDD -Na 1) and an electric field distribution (E) with two distinctively different regions (Fig. 8) [17,35,39,40]. The solution indicates that the Schottky barrier potential causes full ionization of the deep donors at the Schottky contact.…”

“…The low free carrier concentration and high resistivity of undoped SI LEC bulk GaAs are achieved by the compensation of residual shallow acceptor impurities (usually carbon) with the native deep donor defect denoted EL2 [37,38]. We believe that the detector active region width is determined by the concentration of ionized deep dopants and shallow dopants [17,[39][40][41]. A simple model in which one type of shallow acceptor, deep acceptor, shallow donor, and deep donor are present in the band gap gives…”