Preparation of p-type InP layers for detection of radiation

Procházková, O.; Grym, Jan; Zavadil, J.; Žďánský, K.

doi:10.1016/j.jcrysgro.2004.11.101

Cited by 8 publications

(6 citation statements)

References 8 publications

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“…The donor concentration decreased with increasing irradiation. This decrease can be attributed to the decrease in semiconductor free carrier density by irradiation [45]. However, there was an increase in the Fermi energy level [46].…”

Section: Resultsmentioning

confidence: 99%

Electron irradiation degradation on Silicon Schottky diode interface

Uğurel

Aydoğan

2023

Preprint

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Au/n-Si/Au-Sb Schottky diode was fabricated, and electron irradiation was applied to the diode at 25 gray and 50 gray doses. The effects of irradiation on the electrical characteristics of the 450 oC annealed diode were analyzed by means of current-voltage (I-V), capacitance-voltage (C-V), conductance-voltage (G-V) and capacitance-frequency (C-f) measurements before and after irradiation. With increasing irradiation, changes were observed in the ideality factor, barrier height, series resistance, dielectric constant and diffusion potential values depending on the dose used. The n value was found to be 1.231, 1.306, and 1.350 before irradiation, after 25-gray, and after 50-gray irradiation, respectively. The Φb before irradiation was 0.742 eV. Depending on 25 and 50 gray irradiations, it was calculated as 0.768 eV and 0.761 eV, respectively. In addition, there was a decrease in leakage current by irradiation. Depending on the increasing dose, while the capacitance and donor concentration of the diode decreased, there was an increase in the diffusion potential and Fermi energy level. It has been observed that the diode deviates from ideality due to defects in the diode interface depending on irradiation. It has been observed that electron irradiation causes changes in the electrical properties of the Au/n-Si/Au-Sb Schottky diode.

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Section: Resultsmentioning

confidence: 99%

Electron irradiation degradation on Silicon Schottky diode interface

Uğurel

Aydoğan

2023

Preprint

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“…The growth was initiated at the temperature in the range 615-660 °C with supercooling from 5 to 10°C and cooling rate of 0.3 to 0.7°C min -1 . The details of the growth process were published elsewhere [3].…”

Section: Methodsmentioning

confidence: 99%

“…In recent years we have pursued the investigation of the influence of the admixture of rare-earth elements and oxides in the growth melt on electrical and luminescence properties of InP epitaxial layers [3][4][5]. It turns out that the admixture of Ce, Pr, Tb, Dy, Yb, Tm, Tm 2 O 3 and Eu and Eu 2 O 3 leads, at certain concentrations, to the reversal of InP conductivity type from n to p. Dy and Pr were found to produce the conductivity conversion at the lowest concentration thus giving the best opportunity to grow thick, pure and structurally perfect layers.…”

mentioning

confidence: 99%

Impact of Pr on the properties of InP based layers for light sources and detectors

Procházková

Grym

Zavadil

et al. 2009

Phys. Status Solidi (c)

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We report the optimization of LPE growth technique for the preparation of InP and GaInAsP high quality and high purity layers by using Pr purification effect. We have found that Pr addition into the growth melt leads to the reduction of the layer defect density by a half order of magnitude and carrier concentrations diminished to 1014 cm–3. Three types of p‐n junction based radiation detection structures were prepared and their detection performance was assessed by using α‐particles emitted from the 241Am radioactive source. The type III structure, utilizing the p‐n junction with both components grown with Pr addition, exhibits the highest charge collection efficiency. Pr admixture was also exploited in the preparation of quaternary GaInAsP(Pr) active region in the double heterostructure GaInAsP/InP emitting at 1200 nm. Purification effect of Pr addition is demonstrated by measuring impurity concentrations deduced from C‐V curves and by low temperature PL spectra. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Recently, we have performed a unique study of the impact of REs (Tb, Dy, Pr, Tm, Er, Gd, Nd, Lu, Ce) and their oxides (PrO x , TbO x , Tm 2 O 3 , Gd 2 O 3 , Eu 2 O 3 ) on the properties of InP layers (Procházková et al, 2002;Procházková et al, 2005a;Grym et al, 2009). This study was motivated by the lack of systematic research in the field of liquid phase epitaxy (LPE) grown III-V semiconductors from RE treated melts.…”

Section: Main Objectivesmentioning

confidence: 99%

“…Especially Si and main group-six elements acting as shallow donors in III-V semiconductors are effectively gettered due to REs high affinity towards them (Wu et al, 1992). Removal of detrimental impurities is of vital importance in applications such as PIN photodiodes (Ho et al, 1995) or nuclear particle detector structures (Procházková et al, 2005a), where high electron and hole drift velocities are appreciated.…”

Section: Introductionmentioning

confidence: 99%

Semiconductor technologies

2009

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Semiconductor technologies continue to evolve and amaze us. New materials, new structures, new manufacturing tools, and new advancements in modelling and simulation form a breeding ground for novel high performance electronic and photonic devices. This book covers all aspects of semiconductor technology concerning materials, technological processes, and devices, including their modelling, design, integration, and manufacturing.High costs, long manufacturing cycles, and enormous increase in computing power are behind a recent rapid progress of the modelling, simulation, optimisation, and design of semiconductor devices. The first two chapters present the state-of-the-art in modelling of semiconductor processes and devices. Several examples are given: simulation of the switching characteristics of SiC GTO, MOSFET DC modelling for distortion analysis, or high-k dielectricsemiconductor modelling. VIIIOptical technologies are the future of communication systems. Chapter 14 is a review of a device engineering method to provide high functionality of passive nonlinear vertical-cavity devices exploiting saturable absorption in semiconductor MQWs. Chapter 15 is a summary of the stateof-the-art of all-optical flip-flops based on semiconductor technologies. Chapter 16 reviews the current development of optical detection technologies on silicon photonics platform. In chapter 17, the authors describe the design, fabrication technology, and device performance of InP Mach-Zehnder modulator monolithically integrated with semiconductor optical amplifier. In chapter 18, the authors propose a new approach to ultra-fast all-optical signal processing based on quantum dot devices. Chapter 19 discusses present status and future direction of all-optical digital processing through semiconductor optical amplifiers.Finally, chapter 20 presents a new approach to biomedical monitoring and analysis of selected human cognitive processes.

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Preparation of p-type InP layers for detection of radiation

Cited by 8 publications

References 8 publications

Electron irradiation degradation on Silicon Schottky diode interface

Electron irradiation degradation on Silicon Schottky diode interface

Impact of Pr on the properties of InP based layers for light sources and detectors

Semiconductor technologies

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